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Citation: D. Dutartre et al., DEFECT-FREE STRANSKI-KRASTANOV GROWTH OF STRAINED SI1-XGEX LAYERS ON SI, Journal of crystal growth, 142(1-2), 1994, pp. 78-86

Authors: REGOLINI JL GISBERT F DOLINO G BOUCAUD P

Citation: Jl. Regolini et al., GROWTH AND CHARACTERIZATION OF STRAIN COMPENSATED SI1-X-YGEXCY EPITAXIAL LAYERS, Materials letters, 18(1-2), 1993, pp. 57-60