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Results: 1-11 |
Results: 11
RELIABILITY OF NITRIDED WET SILICON DIOXIDE THIN-FILMS IN WSI2 OR TASI2 POLYCIDE PROCESS - INFLUENCE OF THE NITRIDATION TEMPERATURE
Authors: YCKACHE K BOIVIN P BAIGET F RADJAA S AURIEL G SAGNES B OUALID J GLACHANT A
Citation: K. Yckache et al., RELIABILITY OF NITRIDED WET SILICON DIOXIDE THIN-FILMS IN WSI2 OR TASI2 POLYCIDE PROCESS - INFLUENCE OF THE NITRIDATION TEMPERATURE, Microelectronics and reliability, 38(6-8), 1998, pp. 937-942
ENERGY GAP-DETERMINATION OF A CARBON CONTAMINATED THERMAL SILICON-OXIDE THIN-FILM USING REFLECTION ELECTRON-ENERGY-LOSS SPECTROSCOPY
Authors: POVEDA P GLACHANT A
Citation: P. Poveda et A. Glachant, ENERGY GAP-DETERMINATION OF A CARBON CONTAMINATED THERMAL SILICON-OXIDE THIN-FILM USING REFLECTION ELECTRON-ENERGY-LOSS SPECTROSCOPY, Journal of non-crystalline solids, 216, 1997, pp. 83-87
ELECTRON BEAM-ASSISTED GROWTH OF ULTRATHIN SILICON OXYNITRIDE FILMS ON SI(100) AT MODERATE TEMPERATURES - IN-SITU DETERMINATION OF COMPOSITION AND GAP WIDTH
Authors: POVEDA P GLACHANT A
Citation: P. Poveda et A. Glachant, ELECTRON BEAM-ASSISTED GROWTH OF ULTRATHIN SILICON OXYNITRIDE FILMS ON SI(100) AT MODERATE TEMPERATURES - IN-SITU DETERMINATION OF COMPOSITION AND GAP WIDTH, Microelectronic engineering, 28(1-4), 1995, pp. 357-360
CONSTRUCTIVE VERSUS DESTRUCTIVE EFFECTS OF ELECTRON-BEAM IRRADIATION - AN APPLICATION TO PLASMA NITRIDATION OF SIO2 THIN-FILMS
Authors: GLACHANT A
Citation: A. Glachant, CONSTRUCTIVE VERSUS DESTRUCTIVE EFFECTS OF ELECTRON-BEAM IRRADIATION - AN APPLICATION TO PLASMA NITRIDATION OF SIO2 THIN-FILMS, Thin solid films, 254(1-2), 1995, pp. 54-60
LOW-ENERGY ELECTRON-BEAM-ENHANCED FORMATION OF ULTRATHIN INSULATING SILICON OXYNITRIDE LAYERS ON SI(100) AT MODERATE TEMPERATURES - IN-SITUDETERMINATION OF THE BAND-GAP ENERGY USING ELECTRON-ENERGY-LOSS SPECTROSCOPY
Authors: POVEDA P GLACHANT A
Citation: P. Poveda et A. Glachant, LOW-ENERGY ELECTRON-BEAM-ENHANCED FORMATION OF ULTRATHIN INSULATING SILICON OXYNITRIDE LAYERS ON SI(100) AT MODERATE TEMPERATURES - IN-SITUDETERMINATION OF THE BAND-GAP ENERGY USING ELECTRON-ENERGY-LOSS SPECTROSCOPY, Surface science, 323(3), 1995, pp. 258-268
SODIUM OR CESIUM-ASSISTED NITROGEN MONOXIDE REACTION WITH INP(110) ATAMBIENT-TEMPERATURE
Authors: GLACHANT A KIM ST SOUKIASSIAN P
Citation: A. Glachant et al., SODIUM OR CESIUM-ASSISTED NITROGEN MONOXIDE REACTION WITH INP(110) ATAMBIENT-TEMPERATURE, Journal de physique. IV, 4(C9), 1994, pp. 131-134
ELECTRON-BEAM-INDUCED NITROGEN MIGRATION THROUGH A NITRIDED SILICON DIOXIDE THIN-FILM
Authors: GARCIA V GLACHANT A PANTEL R STRABONI A
Citation: V. Garcia et al., ELECTRON-BEAM-INDUCED NITROGEN MIGRATION THROUGH A NITRIDED SILICON DIOXIDE THIN-FILM, Applied surface science, 74(2), 1994, pp. 165-170
LOW-ENERGY (3-100 EV) ELECTRON-BOMBARDMENT-INDUCED NITRIDATION OF THIN SIO2-FILMS - PHYSICOCHEMICAL AND ELECTRICAL ANALYSES
Authors: GLACHANT A GARCIA V BALLAND B BUREAU JC PLOSSU C DUPUY JC STRABONI A
Citation: A. Glachant et al., LOW-ENERGY (3-100 EV) ELECTRON-BOMBARDMENT-INDUCED NITRIDATION OF THIN SIO2-FILMS - PHYSICOCHEMICAL AND ELECTRICAL ANALYSES, Thin solid films, 238(1), 1994, pp. 31-36
GROWTH AND STRUCTURE OF RAPID THERMAL SILICON-OXIDES AND NITROXIDES STUDIED BY SPECTROELLIPSOMETRY AND AUGER-ELECTRON SPECTROSCOPY
Authors: GONON N GAGNAIRE A BARBIER D GLACHANT A
Citation: N. Gonon et al., GROWTH AND STRUCTURE OF RAPID THERMAL SILICON-OXIDES AND NITROXIDES STUDIED BY SPECTROELLIPSOMETRY AND AUGER-ELECTRON SPECTROSCOPY, Journal of applied physics, 76(9), 1994, pp. 5242-5248
PHYSICOCHEMICAL CHARACTERIZATION BY MEANS OF IR ABSORPTION-SPECTROSCOPY OF SI3N4 THIN-FILMS OBTAINED BY CHEMICAL-VAPOR-DEPOSITION ASSISTED BY IN-SITU ELECTRICAL-DISCHARGE
Authors: BALLAND B BUREAU JC BOTTON R GLACHANT A LEMITI M
Citation: B. Balland et al., PHYSICOCHEMICAL CHARACTERIZATION BY MEANS OF IR ABSORPTION-SPECTROSCOPY OF SI3N4 THIN-FILMS OBTAINED BY CHEMICAL-VAPOR-DEPOSITION ASSISTED BY IN-SITU ELECTRICAL-DISCHARGE, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 153-156
NITRIDATION OF THIN SIO2-FILMS INDUCED BY LOW-ENERGY (3-100 EV) ELECTRON-BOMBARDMENT
Authors: GARCIA V GLACHANT A BUREAU JC BALLAND B PLOSSU C DUPUY JC STRABONI A
Citation: V. Garcia et al., NITRIDATION OF THIN SIO2-FILMS INDUCED BY LOW-ENERGY (3-100 EV) ELECTRON-BOMBARDMENT, Microelectronic engineering, 22(1-4), 1993, pp. 73-76
Risultati: 1-11 |