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Results:
1-7
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Results: 7
Authors:
GLADKOV P
MONOVA E
WEBER J
Citation: P. Gladkov et al., PHOTOLUMINESCENCE CHARACTERIZATION OF TE-DOPED GASB LAYERS GROWN BY LIQUID-PHASE EPITAXY FROM BI MELTS, Semiconductor science and technology, 12(11), 1997, pp. 1409-1415
Authors:
GLADKOV P
ZDANSKY K
Citation: P. Gladkov et K. Zdansky, EVIDENCE FOR PHOTOLUMINESCENCE BAND IN P-TYPE AL0.67GA0.33AS RELATED TO NONEQUILIBRIUM DX- CENTERS, Journal of luminescence, 72-4, 1997, pp. 333-335
EVIDENCE FOR PHOTOLUMINESCENCE BAND IN P-TYPE AL0.67GA0.33AS RELATED TO NONEQUILIBRIUM DX(-) CENTERS
Authors:
GLADKOV P
ZDANSKY K
Citation: P. Gladkov et K. Zdansky, EVIDENCE FOR PHOTOLUMINESCENCE BAND IN P-TYPE AL0.67GA0.33AS RELATED TO NONEQUILIBRIUM DX(-) CENTERS, Journal of applied physics, 80(5), 1996, pp. 3004-3010
Authors:
GLADKOV P
MONOVA E
WEBER J
Citation: P. Gladkov et al., LIQUID-PHASE EPITAXY AND PHOTOLUMINESCENCE CHARACTERIZATION OF P-TYPEGASB LAYERS GROWN FROM BI BASED MELTS, Journal of crystal growth, 146(1-4), 1995, pp. 319-325
Authors:
GLADKOV P
VARBLIANSKA K
RUSSEV S
Citation: P. Gladkov et al., APPLICABILITY OF TA GAAS SCHOTTKY PHOTODIODES PREPARED BY ION-ASSISTED PROCESSES/, Sensors and actuators. A, Physical, 44(1), 1994, pp. 51-55
Authors:
VARBLIANSKA K
TZENEV K
MARINOVA T
KRASTEV V
GLADKOV P
Citation: K. Varblianska et al., PREPARATION AND CHARACTERIZATION OF TA2O5 TA/SI SCHOTTKY PHOTODIODE STRUCTURES/, Physica status solidi. a, Applied research, 143(2), 1994, pp. 463-470
Authors:
GLADKOV P
MONOVA E
WEBER J
Citation: P. Gladkov et al., LIQUID-PHASE EPITAXY OF N-TYPE GAAS FROM BI SOLUTION, Journal of applied physics, 74(8), 1993, pp. 5020-5024
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1-7
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