Citation: Lm. Pavlova et al., THERMAL-DISSOCIATION OF COPPER CHALCOGENIDES DURING MELTING, Journal de chimie physique et de physico-chimie biologique, 95(1), 1998, pp. 150-158
Citation: Vm. Glazov et Od. Shchelikov, THERMAL-EXPANSION AND CHARACTERISTIC FEATURES OF THE STRENGTH OF INTERATOMIC BONDS IN MELTS OF III-V-COMPOUNDS (ALSB, GASB, INSB, GAAS, INAS), Semiconductors, 32(4), 1998, pp. 382-384
Citation: Vm. Glazov et al., SPECIFIC FEATURES OF THE LIQUID SILICON STRUCTURE STUDIED BY THE METHODS OF STATISTICAL GEOMETRY, Crystallography reports, 43(4), 1998, pp. 623-627
Citation: Vm. Glazov et Ms. Mikhailova, CHANGING THE CHARACTERISTICS OF INTERATOM IC BONDS STRENGTH AND NATURE OF HEAT-CAPACITY TEMPERATURE-DEPENDENCE OF SILICON DOPED BY NIOBIUM, Doklady Akademii nauk. Rossijskaa akademia nauk, 360(2), 1998, pp. 209-212
Citation: Vm. Glazov, CHEMICAL-TRANSFORMATIONS IN MELTS OF SEMICONDUCTORS DURING THEIR DOUBLE ALLOYING WITH DONOR-TYPE AND ACCEPTOR-TYPE ELEMENTS, Zurnal fiziceskoj himii, 72(6), 1998, pp. 967-979
Citation: Vm. Glazov et Lm. Pavlova, TEMPERATURE-DEPENDENCE OF THE MOLAR VOLUM E OF MOLTEN MERCURY TELLURIDE AND ITS DESCRIPTION BASED ON THE 2-STRUCTURE MODEL AND THE THEORY OF ASSOCIATIVE EQUILIBRIA, Zurnal fiziceskoj himii, 72(2), 1998, pp. 218-224
Citation: Vm. Glazov et Lm. Pavlova, THE INVESTIGATION AND THE THERMODYNAMIC ANALYSIS OF VOLUME PROPERTIESIN HGTE AND CDHGTE MELTS, Thermochimica acta, 314(1-2), 1998, pp. 265-273
Citation: Vm. Glazov et Lm. Pavlova, LIQUATION PHENOMENA IN CMT MELTS AND STRUCTURAL FEATURES IN CADMIUM AND MERCURY TELLURIDES IN A LIQUID-PHASE, Journal of crystal growth, 185, 1998, pp. 1253-1261
Citation: Vm. Glazov et Od. Shchelikov, THERMAL-EXPANSION AND BOND STRENGTH IN A A(2)(II)B(IV) MELTS (MG2SI, MG2SN, MG2PB), Inorganic materials, 34(2), 1998, pp. 106-108
Citation: Vm. Glazov et Vb. Koltsov, CONTRIBUTION OF THE ELECTRON SUBSYSTEM STATE VARIATIONS TO THE MELTING ENTROPY OF COVALENT CRYSTALS, Berichte der Bunsengesellschaft fur Physikalische Chemie, 102(9), 1998, pp. 1095-1101
Citation: Vm. Glazov et al., THE ANOMALOUS TEMPERATURE-DEPENDENCE OF THE HEAT-CAPACITY OF MOLTEN INSB IN THE VICINITY OF THE MELTING TEMPERATURE, Journal de chimie physique et de physico-chimie biologique, 94(5), 1997, pp. 919-927
Authors:
GLAZOV VM
TIMOSHINA GG
MIKHAILOVA MS
POTEMKIN AY
Citation: Vm. Glazov et al., POSSIBILITY OF INCREASING THE THERMAL-STABILITY OF SI BY DOPING WITH TRANSITION OR RARE-EARTH-METALS, Semiconductors, 31(9), 1997, pp. 875-878
Citation: Vm. Glazov et Kb. Poyarkov, X-RAY-DIFFRACTION STUDY ALLOYS OF SYSTEM LEAD-TELLURIUN PREPARED AT ULTRAHIGH (10(6)-10(8) K C) COOLING RATES/, Doklady Akademii nauk. Rossijskaa akademia nauk, 356(5), 1997, pp. 637-641
Authors:
GLAZOV VM
PAVLOVA LM
STANKUS SV
KHAIRULIN RA
Citation: Vm. Glazov et al., THE CONCENTRATION GRADIENT FORMATION EFFE CT IN LIQUID CMT ALLOYS, Doklady Akademii nauk. Rossijskaa akademia nauk, 354(2), 1997, pp. 207-210
Authors:
GLAZOV VM
PASHINKIN AS
MIKHAILOVA MS
TIMOSHINA GG
Citation: Vm. Glazov et al., ABNORMAL HEAT-CAPACITY CHANGE DURING SING LE-CRYSTAL SILICON HEATING DUE TO STRUCTURAL TRANSITION PROCESSES, Doklady Akademii nauk. Rossijskaa akademia nauk, 354(1), 1997, pp. 59-61
Citation: Vm. Glazov et Lm. Pavlova, ABNORMAL EUTECTIC LIQUID OVERCOOLING IN N ONEUTECTIC ALLOYS OF MERCURY-TELLURIUM SYSTEM, Doklady Akademii nauk. Rossijskaa akademia nauk, 353(6), 1997, pp. 765-767
Authors:
GLAZOV VM
LYUSTERNIK VE
PAVLOVA LM
PASHINKIN AS
Citation: Vm. Glazov et al., THE INDIUM-ANTIMONIDE HEAT-CAPACITY INVES TIGATION NEAR CRYSTAL-MELT PHASE-TRANSITION TEMPERATURE, Doklady Akademii nauk. Rossijskaa akademia nauk, 352(4), 1997, pp. 490-493
Citation: Vm. Glazov et al., A MOLECULAR-DYNAMICS CALCULATION OF THE T EMPERATURE-DEPENDENCE OF THE SELF-DIFFUSION COEFFICIENT IN LIQUID SILICON, Zurnal fiziceskoj himii, 71(5), 1997, pp. 834-838
Citation: Vm. Glazov et al., A MOLECULAR-DYNAMICS STUDY OF THE STRUCTU RAL FEATURES OF LIQUID SILICON, Zurnal fiziceskoj himii, 71(4), 1997, pp. 656-661
Citation: Vm. Glazov et Od. Shcheikov, CALCULATION OF SELF-DIFFUSION COEFFICIENT S IN MELTS OF ELEMENTARY SEMICONDUCTORS FROM VISCOSITY AND ULTRASOUND VELOCITY, Zurnal fiziceskoj himii, 71(11), 1997, pp. 2088-2093
Citation: Vm. Glazov et al., IMPLANTATION PRINCIPLES SILICON FOR RISE HIS THERMOSTABILITY, Doklady Akademii nauk. Rossijskaa akademia nauk, 347(3), 1996, pp. 352-355
Authors:
GLAZOV VM
PAVLOVA LM
STANKUS SV
KHAIRULIN RA
Citation: Vm. Glazov et al., VOLUME CHANGE INVESTIGATIONS DURING MELTI NG AND HEATING OF HGTE MELTBY GAMMA-RADIATION PENETRATION METHOD, Doklady Akademii nauk. Rossijskaa akademia nauk, 347(2), 1996, pp. 202-206
Citation: Vm. Glazov et Vb. Koltsov, THE ELECTRONIC-COMPONENT OF THE ENTROPY O F FUSION AND THE SPECTRUM OF ELECTRONIC STATES IN MELTS OF SEMICONDUCTORS WITH DEGENERATE ELECTRON-GAS, Zurnal fiziceskoj himii, 70(9), 1996, pp. 1578-1582