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Results:
1-9
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Results: 9
Authors:
ABABOU S
LEPINE B
PINGEL R
GODEFROY A
QUEMERAIS A
GUIVARCH A
JEZEQUEL G
Citation: S. Ababou et al., GROWTH OF COBALT ON GAAS(001) STUDIED BY PHOTOEMISSION AND PHOTOELECTRON DIFFRACTION, Surface review and letters, 5(1), 1998, pp. 285-288
Authors:
CHRISTIANN F
RAYET P
NGUEODJIBAYE DB
PATEY O
GODEFROY A
KLEIN J
LAPEGUE R
LEGARGASSON JFT
GODFROID E
LAFAIX C
Citation: F. Christiann et al., ENDEMIC LEVEL OF LYME-BORRELIOSIS IN A REGION OF CENTRAL FRANCE - A SEROEPIDEMIOLOGICAL EXAMINATION INVOLVING BLOOD-DONORS, European journal of epidemiology, 13(3), 1997, pp. 361-362
Authors:
GODEFROY A
ABABOU S
LEPINE B
GUIVARCH A
JEZEQUEL G
Citation: A. Godefroy et al., X-RAY AND UV PHOTOELECTRON-SPECTROSCOPY OF OXIDE DESORPTION FROM INP UNDER AS-4 AND OR SB-4 OVERPRESSURES - EXCHANGE-REACTION AS-DOUBLE-LEFT-RIGHT-ARROW-SB ON INP SURFACES/, Journal of crystal growth, 179(3-4), 1997, pp. 349-355
Authors:
GODEFROY A
LECORRE A
CLEROT F
SALAUN S
LOUALICHE S
SIMON JC
HENRY L
VAUDRY C
KEROMNES JC
JOULIE G
LAMOULER P
Citation: A. Godefroy et al., 1.55-MU-M POLARIZATION-INSENSITIVE OPTICAL AMPLIFIER WITH STRAIN-BALANCED SUPERLATTICE ACTIVE LAYER, IEEE photonics technology letters, 7(5), 1995, pp. 473-475
Authors:
CLEROT F
LHARIDON H
LECORRE A
GODEFROY A
SALAUN S
PONCHET A
Citation: F. Clerot et al., SIMULATION AND PHOTOLUMINESCENCE CHARACTERIZATION OF TRANSVERSE ELECTRIC-TRANSVERSE MAGNETIC EMISSION OF STRAINED GA0.47IN0.53AS GA0.62IN0.38AS SUPERLATTICES/, Materials science & engineering. B, Solid-state materials for advanced technology, 31(3), 1995, pp. 293-297
Authors:
PONCHET A
LECORRE A
GODEFROY A
SALAUN S
POUDOULEC A
Citation: A. Ponchet et al., STABILITY OF (114) AND (114) FACETS IN III-V COMPOUNDS UNDER USUAL MBE CONDITIONS, Microelectronics, 26(8), 1995, pp. 783-788
Authors:
PONCHET A
LECORRE A
GODEFROY A
SALAUN S
POUDOULEC A
Citation: A. Ponchet et al., INFLUENCE OF STRESS AND SURFACE RECONSTRUCTION ON THE MORPHOLOGY OF TENSILE GAINAS GROWN ON INP(001) BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 153(3-4), 1995, pp. 71-80
Authors:
LHARIDON H
LECORRE A
SALAUN S
LECROSNIER D
PASSARET A
GODEFROY A
GAUNEAU M
Citation: H. Lharidon et al., SCANNING PHOTOLUMINESCENCE CHARACTERIZATION OF IRON-DOPED GAS-SOURCE MOLECULAR-BEAM EPITAXY INDIUM-PHOSPHIDE LAYERS, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 82-87
Authors:
LOUALICHE S
LECORRE A
GODEFROY A
CLEROT F
LECROSNIER D
POUDOULEC A
SALAUN S
Citation: S. Loualiche et al., INGAAS INP STRAINED-LAYER QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 127(1-4), 1993, pp. 258-260
Risultati:
1-9
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