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Results: 1-20 |
Results: 20
THE ELECTROCHEMICAL IMPEDANCE OF REVERSIBLE SEMICONDUCTOR ELECTRODES - THE N-INP METHYLVIOLOGEN ELECTRODE AS AN EXAMPLE/
Authors: HENS Z GOMES WP
Citation: Z. Hens et Wp. Gomes, THE ELECTROCHEMICAL IMPEDANCE OF REVERSIBLE SEMICONDUCTOR ELECTRODES - THE N-INP METHYLVIOLOGEN ELECTRODE AS AN EXAMPLE/, Electrochimica acta, 43(18), 1998, pp. 2577-2587
THE ELECTROCHEMICAL-BEHAVIOR OF P-TYPE (100)GAAS IN COPPER-SULFATE SOLUTION - INFLUENCE OF SURFACE CONDITIONS
Authors: VEREECKEN PM STRUBBE K GOMES WP
Citation: Pm. Vereecken et al., THE ELECTROCHEMICAL-BEHAVIOR OF P-TYPE (100)GAAS IN COPPER-SULFATE SOLUTION - INFLUENCE OF SURFACE CONDITIONS, Journal of the Electrochemical Society, 145(9), 1998, pp. 3075-3082
ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY AT SEMICONDUCTOR ELECTRODES - THE RECOMBINATION RESISTANCE REVISITED
Authors: HENS Z GOMES WP
Citation: Z. Hens et Wp. Gomes, ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY AT SEMICONDUCTOR ELECTRODES - THE RECOMBINATION RESISTANCE REVISITED, Journal of electroanalytical chemistry [1992], 437(1-2), 1997, pp. 77-83
AN IMPROVED PROCEDURE FOR THE PROCESSING OF CHRONOAMPEROMETRIC DATA -APPLICATION TO THE ELECTRODEPOSITION OF CU UPON (100)N-GAAS
Authors: VEREECKEN PM STRUBBE K GOMES WP
Citation: Pm. Vereecken et al., AN IMPROVED PROCEDURE FOR THE PROCESSING OF CHRONOAMPEROMETRIC DATA -APPLICATION TO THE ELECTRODEPOSITION OF CU UPON (100)N-GAAS, Journal of electroanalytical chemistry [1992], 433(1-2), 1997, pp. 19-31
ON THE DIFFUSION IMPEDANCE AT SEMICONDUCTOR ELECTRODES
Authors: HENS Z GOMES WP
Citation: Z. Hens et Wp. Gomes, ON THE DIFFUSION IMPEDANCE AT SEMICONDUCTOR ELECTRODES, JOURNAL OF PHYSICAL CHEMISTRY B, 101(30), 1997, pp. 5814-5821
A FUNDAMENTAL-STUDY ON N-IN0.53GA0.47AS AND P-IN0.53GA0.47AS IN H2O2 SOLUTION - ELECTROCHEMICAL-BEHAVIOR AND SELECTIVE ETCHING VS INP
Authors: THEUWIS A GOMES WP
Citation: A. Theuwis et Wp. Gomes, A FUNDAMENTAL-STUDY ON N-IN0.53GA0.47AS AND P-IN0.53GA0.47AS IN H2O2 SOLUTION - ELECTROCHEMICAL-BEHAVIOR AND SELECTIVE ETCHING VS INP, Journal of the Electrochemical Society, 144(4), 1997, pp. 1390-1398
INVESTIGATION ON THE ELECTROCHEMISTRY AND ETCHING AT THE (100)GAAS-VERTICAL-BAR-HIO3 INTERFACE
Authors: VERPOORT PJ VERMEIR IE GOMES WP
Citation: Pj. Verpoort et al., INVESTIGATION ON THE ELECTROCHEMISTRY AND ETCHING AT THE (100)GAAS-VERTICAL-BAR-HIO3 INTERFACE, Journal of electroanalytical chemistry [1992], 411(1-2), 1996, pp. 67-72
CHEMICAL AND ELECTROCHEMICAL INTERACTION OF ACIDIC H2O2 SOLUTIONS WITH (100)INP
Authors: THEUWIS A VERMEIR IE GOMES WP
Citation: A. Theuwis et al., CHEMICAL AND ELECTROCHEMICAL INTERACTION OF ACIDIC H2O2 SOLUTIONS WITH (100)INP, Journal of electroanalytical chemistry [1992], 410(1), 1996, pp. 31-42
ELECTROCHEMICAL REDUCTION VS, VAPOR-DEPOSITION FOR N-GAAS CU SCHOTTKY-BARRIER FORMATION - A COMPARATIVE-STUDY/
Authors: VEREECKEN PM VANALME GM VANMEIRHAEGHE RL CARDON F GOMES WP
Citation: Pm. Vereecken et al., ELECTROCHEMICAL REDUCTION VS, VAPOR-DEPOSITION FOR N-GAAS CU SCHOTTKY-BARRIER FORMATION - A COMPARATIVE-STUDY/, Journal of the Chemical Society. Faraday transactions, 92(20), 1996, pp. 4069-4075
IMPEDANCE SPECTROSCOPY AT SEMICONDUCTOR ELECTRODES - REVIEW AND RECENT DEVELOPMENTS
Authors: GOMES WP VANMAEKELBERGH D
Citation: Wp. Gomes et D. Vanmaekelbergh, IMPEDANCE SPECTROSCOPY AT SEMICONDUCTOR ELECTRODES - REVIEW AND RECENT DEVELOPMENTS, Electrochimica acta, 41(7-8), 1996, pp. 967-973
ELECTROCHEMICAL-BEHAVIOR OF (100)GAAS IN COPPER(II)-CONTAINING SOLUTIONS
Authors: VEREECKEN PM KERCHOVE FV GOMES WP
Citation: Pm. Vereecken et al., ELECTROCHEMICAL-BEHAVIOR OF (100)GAAS IN COPPER(II)-CONTAINING SOLUTIONS, Electrochimica acta, 41(1), 1996, pp. 95-107
THE ETCHING OF INP BY ACIDIC IODINE SOLUTIONS - A KINETIC AND ELECTROCHEMICAL STUDY
Authors: VERMEIR IE GOMES WP
Citation: Ie. Vermeir et Wp. Gomes, THE ETCHING OF INP BY ACIDIC IODINE SOLUTIONS - A KINETIC AND ELECTROCHEMICAL STUDY, Journal of the Electrochemical Society, 143(4), 1996, pp. 1319-1325
SOME FUNDAMENTAL-ASPECTS OF PROFILE ETCHING AT INP SURFACES
Authors: VERMEIR IE GOMES WP VANDAELE P
Citation: Ie. Vermeir et al., SOME FUNDAMENTAL-ASPECTS OF PROFILE ETCHING AT INP SURFACES, Journal of the Electrochemical Society, 142(9), 1995, pp. 3226-3232
FUNDAMENTAL-STUDY ON THE SELECTIVE ETCHING OF AL0.25GA0.75AS VERSUS GAAS IN ACIDIC IODINE SOLUTIONS
Authors: VERPOORT PJ VERMEIR IE GOMES WP
Citation: Pj. Verpoort et al., FUNDAMENTAL-STUDY ON THE SELECTIVE ETCHING OF AL0.25GA0.75AS VERSUS GAAS IN ACIDIC IODINE SOLUTIONS, Journal of the Electrochemical Society, 142(10), 1995, pp. 3589-3595
ON THE ETCHING OF INP IN ALKALINE K3FE(CN)6 SOLUTIONS
Authors: VERMEIR IE GOMES WP
Citation: Ie. Vermeir et Wp. Gomes, ON THE ETCHING OF INP IN ALKALINE K3FE(CN)6 SOLUTIONS, Journal of electroanalytical chemistry [1992], 365(1-2), 1994, pp. 59-69
THE EFFECT OF HIGH LICL CONCENTRATIONS UPON THE COMPETITION BETWEEN ANODIC DECOMPOSITION AND STABILIZATION OF THE N-GAAS FE2+ ELECTRODE/
Authors: STRUBBE K GOMES WP
Citation: K. Strubbe et Wp. Gomes, THE EFFECT OF HIGH LICL CONCENTRATIONS UPON THE COMPETITION BETWEEN ANODIC DECOMPOSITION AND STABILIZATION OF THE N-GAAS FE2+ ELECTRODE/, Journal of electroanalytical chemistry [1992], 349(1-2), 1993, pp. 429-441
THE ANODIC-DISSOLUTION OF INP STUDIED BY THE OPTOELECTRICAL IMPEDANCEMETHOD .2. INTERACTION BETWEEN ANODIC AND CHEMICAL ETCHING OF INP IN IODIC ACID-SOLUTIONS
Authors: VERMEIR IE GOMES WP ERNE BH VANMAEKELBERGH D
Citation: Ie. Vermeir et al., THE ANODIC-DISSOLUTION OF INP STUDIED BY THE OPTOELECTRICAL IMPEDANCEMETHOD .2. INTERACTION BETWEEN ANODIC AND CHEMICAL ETCHING OF INP IN IODIC ACID-SOLUTIONS, Electrochimica acta, 38(17), 1993, pp. 2569-2575
BROMINE-METHANOL AS AN ETCHANT FOR SEMICONDUCTORS - A FUNDAMENTAL-STUDY ON GAP .1. ETCHING BEHAVIOR OF N-TYPE AND P-TYPE GAP
Authors: STRUBBE K GOMES WP
Citation: K. Strubbe et Wp. Gomes, BROMINE-METHANOL AS AN ETCHANT FOR SEMICONDUCTORS - A FUNDAMENTAL-STUDY ON GAP .1. ETCHING BEHAVIOR OF N-TYPE AND P-TYPE GAP, Journal of the Electrochemical Society, 140(11), 1993, pp. 3294-3300
BROMINE-METHANOL AS AN ETCHANT FOR SEMICONDUCTORS - A FUNDAMENTAL-STUDY ON GAP .2. INTERACTION BETWEEN CHEMICAL AND ANODIC ETCHING OF P-TYPE GAP
Authors: STRUBBE K GOMES WP
Citation: K. Strubbe et Wp. Gomes, BROMINE-METHANOL AS AN ETCHANT FOR SEMICONDUCTORS - A FUNDAMENTAL-STUDY ON GAP .2. INTERACTION BETWEEN CHEMICAL AND ANODIC ETCHING OF P-TYPE GAP, Journal of the Electrochemical Society, 140(11), 1993, pp. 3301-3305
(PHOTO)ELECTROCHEMISTRY - A SUITABLE TOOL FOR INVESTIGATING WET ETCHING PROCESSES ON III-V SEMICONDUCTORS
Authors: GOOSSENS HH GOMES WP
Citation: Hh. Goossens et Wp. Gomes, (PHOTO)ELECTROCHEMISTRY - A SUITABLE TOOL FOR INVESTIGATING WET ETCHING PROCESSES ON III-V SEMICONDUCTORS, Electrochimica acta, 37(5), 1992, pp. 811-826
Risultati: 1-20 |