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Results: 1-10 |
Results: 10
MOS-COMPATIBLE FABRICATION AND CHARACTERIZATION OF TUNNEL-JUNCTIONS IN BESOI-MATERIAL
Authors: KOSTER T HADAM B GOLDSCHMIDTBOING F HOFMANN K GONDERMANN J STEIN J HU S ALTMEYER S SPANGENBERG B KURZ H
Citation: T. Koster et al., MOS-COMPATIBLE FABRICATION AND CHARACTERIZATION OF TUNNEL-JUNCTIONS IN BESOI-MATERIAL, Microelectronic engineering, 42, 1998, pp. 531-534
METAL-OXIDE-SEMICONDUCTOR-COMPATIBLE SILICON-BASED SINGLE-ELECTRON TRANSISTOR USING BONDED AND ETCHED BACK SILICON-ON-INSULATOR MATERIAL
Authors: KOSTER T HADAM B HOFMANN K GONDERMANN J STEIN J HU S ALTMEYER S SPANGENBERG B KURZ H
Citation: T. Koster et al., METAL-OXIDE-SEMICONDUCTOR-COMPATIBLE SILICON-BASED SINGLE-ELECTRON TRANSISTOR USING BONDED AND ETCHED BACK SILICON-ON-INSULATOR MATERIAL, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2836-2839
FABRICATION AND CHARACTERIZATION OF SIGE BASED IN-PLANE-GATE TRANSISTORS
Authors: KOSTER T STEIN J HADAM B GONDERMANN J SPANGENBERG B ROSKOS HG KURZ H HOLZMANN M RIEDINGER M ABSTREITER G
Citation: T. Koster et al., FABRICATION AND CHARACTERIZATION OF SIGE BASED IN-PLANE-GATE TRANSISTORS, Microelectronic engineering, 35(1-4), 1997, pp. 301-304
NEW CONCEPT FOR ULTRA-SMALL N-MOSFETS
Authors: GONDERMANN J SCHIEPANSKI J HADAM B KOSTER T ROWER T STEIN J SPANGENBERG B ROSKOS H KURZ H
Citation: J. Gondermann et al., NEW CONCEPT FOR ULTRA-SMALL N-MOSFETS, Microelectronic engineering, 35(1-4), 1997, pp. 305-308
A TRIANGLE-SHAPED NANOSCALE METAL-OXIDE-SEMICONDUCTOR DEVICE
Authors: GONDERMANN J ROWER T HADAM B KOSTER T STEIN J SPANGENBERG B ROSKOS H KURZ H
Citation: J. Gondermann et al., A TRIANGLE-SHAPED NANOSCALE METAL-OXIDE-SEMICONDUCTOR DEVICE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4042-4045
INVESTIGATION OF SI SIGE HETEROSTRUCTURES PATTERNED BY REACTIVE ION ETCHING/
Authors: KOSTER T HADAM B GONDERMANN J SPANGENBERG B ROSKOS HG KURZ H BRUNNER J ABSTREITER G
Citation: T. Koster et al., INVESTIGATION OF SI SIGE HETEROSTRUCTURES PATTERNED BY REACTIVE ION ETCHING/, Microelectronic engineering, 30(1-4), 1996, pp. 341-344
FABRICATION AND CHARACTERIZATION OF LOCALLY GROWN SIGE WIRES AND DOTS
Authors: GONDERMANN J SPANGENBERG B KOSTER T HADAM B ROSKOS HG KURZ H BRUNNER J SCHITTENHELM P ABSTREITER G GOSSNER H EISELE I
Citation: J. Gondermann et al., FABRICATION AND CHARACTERIZATION OF LOCALLY GROWN SIGE WIRES AND DOTS, Materials science and technology, 11(4), 1995, pp. 407-409
FABRICATION AND CHARACTERIZATION OF SI SIGE NANOMETER STRUCTURES/
Authors: GONDERMANN J SPANGENBERG B KOSTER T HADAM B ROSKOS HG KURZ H BRUNNER J SCHITTENHELM P ABSTREITER G GOSSNER H EISELE I
Citation: J. Gondermann et al., FABRICATION AND CHARACTERIZATION OF SI SIGE NANOMETER STRUCTURES/, Microelectronic engineering, 27(1-4), 1995, pp. 83-86
SIGE WIRES AND DOTS GROWN BY LOCAL EPITAXY
Authors: BRUNNER J SCHITTENHELM P GONDERMANN J SPANGENBERG B HADAM B KOSTER T ROSKOS HG KURZ H GOSSNER H EISELE I ABSTREITER G
Citation: J. Brunner et al., SIGE WIRES AND DOTS GROWN BY LOCAL EPITAXY, Journal of crystal growth, 150(1-4), 1995, pp. 1060-1064
AL-SIO2-AL SANDWICH MICROSTRIP LINES FOR HIGH-FREQUENCY ON-CHIP INTERCONNECTS
Authors: GONDERMANN J VONKAMIENSKI EGS ROSKOS HG KURZ H
Citation: J. Gondermann et al., AL-SIO2-AL SANDWICH MICROSTRIP LINES FOR HIGH-FREQUENCY ON-CHIP INTERCONNECTS, IEEE transactions on microwave theory and techniques, 41(12), 1993, pp. 2087-2091
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