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Results: 1-15 |
Results: 15
BROMINE ION-BEAM-ASSISTED ETCHING OF INP AND GAAS
Authors: ROSSLER JM ROYTER Y MULL DE GOODHUE WD FONSTAD CG
Citation: Jm. Rossler et al., BROMINE ION-BEAM-ASSISTED ETCHING OF INP AND GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1012-1017
77 K FAR-INFRARED HOT-ELECTRON MULTI-QUANTUM-WELL DETECTORS
Authors: JACOBS ES WALDMAN J GOODHUE WD
Citation: Es. Jacobs et al., 77 K FAR-INFRARED HOT-ELECTRON MULTI-QUANTUM-WELL DETECTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1430-1434
PRACTICAL OEICS BASED ON THE MONOLITHIC INTEGRATION OF GAAS-INGAP LEDS WITH COMMERCIAL GAAS VLSI ELECTRONICS
Authors: AHADIAN JF VAIDYANATHAN PT PATTERSON SG ROYTER Y MULL D PETRICH GS GOODHUE WD PRASAD S KOLODZIEJSKI LA FONSTAD CG
Citation: Jf. Ahadian et al., PRACTICAL OEICS BASED ON THE MONOLITHIC INTEGRATION OF GAAS-INGAP LEDS WITH COMMERCIAL GAAS VLSI ELECTRONICS, IEEE journal of quantum electronics, 34(7), 1998, pp. 1117-1123
ANALYSIS OF MOLECULAR-BEAM EPITAXY-GROWN GA1-XALXAS GA1-YALYAS DIELECTRIC STACK MIRRORS USING COMPLEX INDEXES OF REFRACTION/
Authors: STRACHAN WJ REINER J GOODHUE WD KARAKASHIAN AS CASASANTA V GELLER JD
Citation: Wj. Strachan et al., ANALYSIS OF MOLECULAR-BEAM EPITAXY-GROWN GA1-XALXAS GA1-YALYAS DIELECTRIC STACK MIRRORS USING COMPLEX INDEXES OF REFRACTION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2318-2321
FAR-INFRARED PHOTOCONDUCTIVE MAGNETOSPECTROSCOPY AS A TOOL FOR STUDYING SHALLOW DONOR CONCENTRATION PROFILES IN WIDE GAAS ALGAAS QUANTUM-WELLS/
Authors: CHAI YH GOODHUE WD MUELLER ER WALDMAN J
Citation: Yh. Chai et al., FAR-INFRARED PHOTOCONDUCTIVE MAGNETOSPECTROSCOPY AS A TOOL FOR STUDYING SHALLOW DONOR CONCENTRATION PROFILES IN WIDE GAAS ALGAAS QUANTUM-WELLS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 674-677
BASIC MODULE FOR AN INTEGRATED OPTICAL-PHASE DIFFERENCE MEASUREMENT AND CORRECTION SYSTEM
Authors: GOLUBOVIC B DONNELLY JP WANG CA GOODHUE WD REDIKER RH
Citation: B. Golubovic et al., BASIC MODULE FOR AN INTEGRATED OPTICAL-PHASE DIFFERENCE MEASUREMENT AND CORRECTION SYSTEM, IEEE photonics technology letters, 7(6), 1995, pp. 649-651
BAND NONPARABOLICITY AND CENTRAL-CELL CORRECTIONS FOR D- CENTERS IN GAAS QUANTUM-WELLS
Authors: MUELLER ER LARSEN DM GOODHUE WD WALDMAN J
Citation: Er. Mueller et al., BAND NONPARABOLICITY AND CENTRAL-CELL CORRECTIONS FOR D- CENTERS IN GAAS QUANTUM-WELLS, Physical review. B, Condensed matter, 51(4), 1995, pp. 2326-2333
OBSERVATION OF ELECTRIC-FIELD GRADIENTS NEAR FIELD-EMISSION CATHODE ARRAYS
Authors: LIANG Y BONNELL DA GOODHUE WD RATHMAN DD BOZLER CO
Citation: Y. Liang et al., OBSERVATION OF ELECTRIC-FIELD GRADIENTS NEAR FIELD-EMISSION CATHODE ARRAYS, Applied physics letters, 66(9), 1995, pp. 1147-1149
BRIGHT-FIELD ANALYSIS OF FIELD-EMISSION CONES USING HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY AND THE EFFECT OF STRUCTURAL-PROPERTIES ON CURRENT STABILITY
Authors: GOODHUE WD NITISHIN PM HARRIS CT BOZLER CO RATHMAN DD JOHNSON GD HOLLIS MA
Citation: Wd. Goodhue et al., BRIGHT-FIELD ANALYSIS OF FIELD-EMISSION CONES USING HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY AND THE EFFECT OF STRUCTURAL-PROPERTIES ON CURRENT STABILITY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 693-696
EFFECTS OF BAND NONPARABOLICITY AND CENTRAL-CELL CORRECTIONS ON THE SPECTRUM OF SI DONORS IN GAAS QUANTUM-WELLS (VOL 49, PG 13475, 1994)
Authors: MUELLER ER LARSEN DM WALDMAN J GOODHUE WD
Citation: Er. Mueller et al., EFFECTS OF BAND NONPARABOLICITY AND CENTRAL-CELL CORRECTIONS ON THE SPECTRUM OF SI DONORS IN GAAS QUANTUM-WELLS (VOL 49, PG 13475, 1994), Physical review. B, Condensed matter, 50(15), 1994, pp. 11287-11287
EFFECTS OF BAND NONPARABOLICITY AND CENTRAL-CELL CORRECTIONS ON THE SPECTRUM OF SI DONORS IN GAAS QUANTUM-WELLS (VOL 49, PG 13475, 1994)
Authors: MUELLER ER LARSEN DM WALDMAN J GOODHUE WD
Citation: Er. Mueller et al., EFFECTS OF BAND NONPARABOLICITY AND CENTRAL-CELL CORRECTIONS ON THE SPECTRUM OF SI DONORS IN GAAS QUANTUM-WELLS (VOL 49, PG 13475, 1994), Physical review. B, Condensed matter, 50(15), 1994, pp. 11287-11287
EFFECTS OF BAND NONPARABOLICITY AND CENTRAL-CELL CORRECTIONS ON THE SPECTRUM OF SI DONORS IN GAAS QUANTUM-WELLS
Authors: MUELLER ER LARSEN DM WALDMAN J GOODHUE WD
Citation: Er. Mueller et al., EFFECTS OF BAND NONPARABOLICITY AND CENTRAL-CELL CORRECTIONS ON THE SPECTRUM OF SI DONORS IN GAAS QUANTUM-WELLS, Physical review. B, Condensed matter, 49(19), 1994, pp. 13475-13481
CW OPERATION OF MONOLITHIC ARRAYS OF SURFACE-EMITTING FOLDED-CAVITY INGAAS ALGAAS DIODE-LASERS/
Authors: DONNELLY JP GOODHUE WD WANG CA BAILEY RJ LINCOLN GA JOHNSON GD MISSAGGIA LJ WALPOLE JN
Citation: Jp. Donnelly et al., CW OPERATION OF MONOLITHIC ARRAYS OF SURFACE-EMITTING FOLDED-CAVITY INGAAS ALGAAS DIODE-LASERS/, IEEE photonics technology letters, 5(7), 1993, pp. 747-750
CW OPERATION OF MONOLITHIC ARRAYS OF SURFACE-EMITTING ALGAAS DIODE-LASERS WITH DRY-ETCHED VERTICAL FACETS AND PARABOLIC DEFLECTING MIRRORS
Authors: DONNELLY JP GOODHUE WD WANG CA BAILEY RJ LINCOLN GA JOHNSON GD MISSAGGIA LJ WALPOLE JN
Citation: Jp. Donnelly et al., CW OPERATION OF MONOLITHIC ARRAYS OF SURFACE-EMITTING ALGAAS DIODE-LASERS WITH DRY-ETCHED VERTICAL FACETS AND PARABOLIC DEFLECTING MIRRORS, IEEE photonics technology letters, 5(10), 1993, pp. 1146-1149
DIODE-LASER-PUMPED INGAAS GAAS/ALGAAS HETEROSTRUCTURE LASERS WITH LOWINTERNAL LOSS AND 4-W AVERAGE POWER/
Authors: LE HQ GOODHUE WD MAKI PA DICECCA S
Citation: Hq. Le et al., DIODE-LASER-PUMPED INGAAS GAAS/ALGAAS HETEROSTRUCTURE LASERS WITH LOWINTERNAL LOSS AND 4-W AVERAGE POWER/, Applied physics letters, 63(11), 1993, pp. 1465-1467
Risultati: 1-15 |