Authors: GOREV NB MAKAROVA TV PROKHOROV EF UKOLOV AT EPPEL VI

Citation: Nb. Gorev et al., HIGH-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTIC OF GAAS-BASED, THIN-FILM STRUCTURES, Semiconductors, 31(1), 1997, pp. 78-80

Authors: KOSTYLEV SA PROKHOROV EF GOREV NB KODZHESPIROVA IF

Citation: Sa. Kostylev et al., PECULIARITIES OF HIGH-FREQUENCY C-V MEASUREMENTS IN N-TYPE GAAS THIN-FILM STRUCTURES, Solid-state electronics, 41(5), 1997, pp. 784-786

Authors: KOSTYLEV SA PROKHOROV EF GOREV NB KODZHESPIROVA EF KOVALENKO YA

Citation: Sa. Kostylev et al., EFFECT OF SUBSTRATE INHOMOGENEITY ON EXTRINSIC PHOTOCONDUCTIVITY OF N-TYPE GAAS THIN-FILM STRUCTURES UNDER BACKGATING, Solid-state electronics, 41(12), 1997, pp. 1923-1927

Authors: GOREV NB MAKAROVA TV PROKHOROV EF UKOLOV AT

Citation: Nb. Gorev et al., RELATION BETWEEN PARAMETERS OF N-GAAS THI N-FILM STRUCTURES AND LOW-FREQUENCY BARRIER CAPACITANCE, UKRAINSKII FIZICHESKII ZHURNAL, 39(3-4), 1994, pp. 333-336

Authors: GOREV NB MAKAROVA TV PROKHOROV EF UKOLOV AT EPPEL VI

Citation: Nb. Gorev et al., DEEP LEVELS AND REDUCTION IN THE CONDUCTANCE OF A DIRECT SELECTIVELY DOPED HETEROSTRUCTURE ON APPLICATION OF A TRIGGERING VOLTAGE PULSE TO THE GATE, Semiconductors, 27(6), 1993, pp. 540-542