ACNP - Italian Periodicals Catalogue

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Results: 1-13 |

Results: 13

FORMATION OF SINGLE-CRYSTALLINE SILICON NANOSTRUCTURES BY SELF-ASSEMBLING GROWTH WITH MOLECULAR-BEAM EPITAXY

Authors: BAUMGARTNER H KAESEN F GOSSNER H EISELE I

Citation: H. Baumgartner et al., FORMATION OF SINGLE-CRYSTALLINE SILICON NANOSTRUCTURES BY SELF-ASSEMBLING GROWTH WITH MOLECULAR-BEAM EPITAXY, Applied surface science, 132, 1998, pp. 747-754

DANGEROUS PARASITICS OF SOCKETED CDM ESD TESTERS

Authors: GOSSNER H BRODBECK T

Citation: H. Gossner et T. Brodbeck, DANGEROUS PARASITICS OF SOCKETED CDM ESD TESTERS, Microelectronics and reliability, 37(10-11), 1997, pp. 1465-1468

HYSTERESIS BEHAVIOR IN 85-NM CHANNEL-LENGTH VERTICAL N-MOSFETS GROWN BY MBE

Authors: RAO VR WITTMANN F GOSSNER H EISELE I

Citation: Vr. Rao et al., HYSTERESIS BEHAVIOR IN 85-NM CHANNEL-LENGTH VERTICAL N-MOSFETS GROWN BY MBE, I.E.E.E. transactions on electron devices, 43(6), 1996, pp. 973-976

SILICON NANOELECTRONIC DEVICES WITH DELTA-DOPED LAYERS

Authors: WITTMANN F GOSSNER H EISELE I

Citation: F. Wittmann et al., SILICON NANOELECTRONIC DEVICES WITH DELTA-DOPED LAYERS, Journal of materials science. Materials in electronics, 6(5), 1995, pp. 336-340

FABRICATION AND CHARACTERIZATION OF LOCALLY GROWN SIGE WIRES AND DOTS

Authors: GONDERMANN J SPANGENBERG B KOSTER T HADAM B ROSKOS HG KURZ H BRUNNER J SCHITTENHELM P ABSTREITER G GOSSNER H EISELE I

Citation: J. Gondermann et al., FABRICATION AND CHARACTERIZATION OF LOCALLY GROWN SIGE WIRES AND DOTS, Materials science and technology, 11(4), 1995, pp. 407-409

FABRICATION AND CHARACTERIZATION OF SI SIGE NANOMETER STRUCTURES/

Authors: GONDERMANN J SPANGENBERG B KOSTER T HADAM B ROSKOS HG KURZ H BRUNNER J SCHITTENHELM P ABSTREITER G GOSSNER H EISELE I

Citation: J. Gondermann et al., FABRICATION AND CHARACTERIZATION OF SI SIGE NANOMETER STRUCTURES/, Microelectronic engineering, 27(1-4), 1995, pp. 83-86

LOCAL EPITAXY OF SI SIGE WIRES AND DOTS

Authors: BRUNNER J JUNG W SCHITTENHELM P GAIL M ABSTREITER G GONDERMAN J HADAM B KOESTER T SPANGENBERG B ROSKOS HG KURZ H GOSSNER H EISELE I

Citation: J. Brunner et al., LOCAL EPITAXY OF SI SIGE WIRES AND DOTS, Journal of crystal growth, 157(1-4), 1995, pp. 270-275

INFLUENCE OF SELF-ASSEMBLING GROWTH ON THE SHAPE AND THE ORIENTATION OF SILICON NANOSTRUCTURES

Authors: GOSSNER H RUPP T EISELE I

Citation: H. Gossner et al., INFLUENCE OF SELF-ASSEMBLING GROWTH ON THE SHAPE AND THE ORIENTATION OF SILICON NANOSTRUCTURES, Journal of crystal growth, 157(1-4), 1995, pp. 308-311

SIGE WIRES AND DOTS GROWN BY LOCAL EPITAXY

Authors: BRUNNER J SCHITTENHELM P GONDERMANN J SPANGENBERG B HADAM B KOSTER T ROSKOS HG KURZ H GOSSNER H EISELE I ABSTREITER G

Citation: J. Brunner et al., SIGE WIRES AND DOTS GROWN BY LOCAL EPITAXY, Journal of crystal growth, 150(1-4), 1995, pp. 1060-1064

VERTICAL MOS TECHNOLOGY WITH SUB-0.1-MU-M CHANNEL LENGTHS

Authors: GOSSNER H WITTMANN F EISELE I GRABOLLA T BEHAMMER D

Citation: H. Gossner et al., VERTICAL MOS TECHNOLOGY WITH SUB-0.1-MU-M CHANNEL LENGTHS, Electronics Letters, 31(16), 1995, pp. 1394-1396

SELF-ORGANIZING GROWTH OF NANOMETER MESA STRUCTURES ON SILICON (100) SUBSTRATES

Authors: GOSSNER H BAUMGARTNER H HAMMERL E WITTMANN F EISELE I HEINZEL T LORENZ H

Citation: H. Gossner et al., SELF-ORGANIZING GROWTH OF NANOMETER MESA STRUCTURES ON SILICON (100) SUBSTRATES, JPN J A P 1, 33(4B), 1994, pp. 2268-2271

VERTICAL SI-METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH CHANNEL LENGTHS OF 50 NM BY MOLECULAR-BEAM EPITAXY

Authors: GOSSNER H EISELE I RISCH L

Citation: H. Gossner et al., VERTICAL SI-METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH CHANNEL LENGTHS OF 50 NM BY MOLECULAR-BEAM EPITAXY, JPN J A P 1, 33(4B), 1994, pp. 2423-2428

EXCITONIC LUMINESCENCE FROM LOCALLY GROWN SIGE WIRES AND DOTS

Authors: BRUNNER J RUPP TS GOSSNER H RITTER R EISELE I ABSTREITER G

Citation: J. Brunner et al., EXCITONIC LUMINESCENCE FROM LOCALLY GROWN SIGE WIRES AND DOTS, Applied physics letters, 64(8), 1994, pp. 994-996

Risultati: 1-13 |