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Results: 1-23 |
Results: 23

Authors: DVURECHENSKII AV KARANOVICH AA GROTZSCHEL R HERRMANN F KEGLER R RYBIN AV
Citation: Av. Dvurechenskii et al., DEPTH DISTRIBUTION OF POINT-DEFECTS IN SI BOMBARDED BY HIGH-ENERGY N5+ AND SI5+ IONS, Physics of the solid state, 40(2), 1998, pp. 195-199

Authors: BRENSCHEIDT F PIEKOSZEWSKI J WIESER E LANGNER J GROTZSCHEL R REUTHER H
Citation: F. Brenscheidt et al., MODIFICATION OF SILICON-NITRIDE CERAMICS WITH HIGH-INTENSITY PULSED ION-BEAMS, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 253(1-2), 1998, pp. 86-93

Authors: MARKWITZ A SCHMIDT B MATZ W GROTZSCHEL R MUCKLICH A
Citation: A. Markwitz et al., MICROSTRUCTURAL INVESTIGATION OF ION-BEAM SYNTHESIZED GERMANIUM NANOCLUSTERS EMBEDDED IN SIO2 LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 142(3), 1998, pp. 338-348

Authors: BEHRISCH R GRIGULL S KREISSIG U GROTZSCHEL R
Citation: R. Behrisch et al., INFLUENCE OF SURFACE-ROUGHNESS ON MEASURING DEPTH PROFILES AND THE TOTAL AMOUNT OF IMPLANTED IONS BY RBS AND ERDA, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 628-632

Authors: PLACHKE D CARSTANJEN HD EMRICK RM NOLTE H HUBER H ASSMANN W GROTZSCHEL R
Citation: D. Plachke et al., CHANNELING AND BLOCKING MEASUREMENTS ON QUASI-CRYSTALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 816-821

Authors: TUROS A WIERZCHOWSKI W WIETESKA K WENDLER E WESCH W GRAEFF W GROTZSCHEL R STRUPINSKI W
Citation: A. Turos et al., ION-BOMBARDMENT INDUCED RELAXATION OF STRAINED ALGAAS GAAS HETEROSTRUCTURES STUDIED BY THE COMPLEMENTARY USE OF RBS-CHANNELING AND X-RAY SYNCHROTRON-RADIATION/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1062-1067

Authors: PARASCANDOLA S GUNZEL R GROTZSCHEL R RICHTER E MOLLER W
Citation: S. Parascandola et al., ANALYSIS OF DEUTERIUM INDUCED NUCLEAR-REACTIONS GIVING CRITERIA FOR THE FORMATION PROCESS OF EXPANDED AUSTENITE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1281-1285

Authors: WIESER E GROTZSCHEL R MUCKLICH A PROKERT F
Citation: E. Wieser et al., MICROSTRUCTURE AND TRIBOLOGICAL PROPERTIES OF ALUMINUM IMPLANTED WITHHIGH-DOSES OF NICKEL, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 134(3-4), 1998, pp. 365-376

Authors: MARKWITZ A MATZ W SCHMIDT B GROTZSCHEL R
Citation: A. Markwitz et al., DEPTH PROFILE ANALYSIS - STEM-EDX VS. RBS, Surface and interface analysis, 26(5), 1998, pp. 359-366

Authors: SEIFARTH H GROTZSCHEL R MARKWITZ A MATZ W NITZSCHE P REBOHLE L
Citation: H. Seifarth et al., PREPARATION OF SIO2-FILMS WITH EMBEDDED SI NANOCRYSTALS BY REACTIVE RF MAGNETRON SPUTTERING, Thin solid films, 330(2), 1998, pp. 202-205

Authors: REBOHLE L VONBORANY J GROTZSCHEL R MARKWITZ A SCHMIDT B TYSCHENKO IE SKORUPA W FROB H LEO K
Citation: L. Rebohle et al., STRONG BLUE AND VIOLET PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROMGE-IMPLANTED AND SI-IMPLANTED SILICON DIOXIDE, Physica status solidi. a, Applied research, 165(1), 1998, pp. 31-35

Authors: HUBER H ASSMANN W KARAMIAN SA MUCKLICH A PRUSSEIT W GAZIS E GROTZSCHEL R KOKKORIS M KOSSIONIDIS E MIESKES HD VLASTOU R
Citation: H. Huber et al., VOID FORMATION IN GE INDUCED BY HIGH-ENERGY HEAVY-ION IRRADIATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(3), 1997, pp. 542-546

Authors: SUN GY FRIEDRICH M GROTZSCHEL R BURGER W BEHRISCH R GARCIAROSALES C
Citation: Gy. Sun et al., QUANTITATIVE AMS DEPTH PROFILING OF THE HYDROGEN ISOTOPES COLLECTED IN GRAPHITE DIVERTOR AND WALL TILES OF THE TOKAMAK ASDEX-UPGRADE, Journal of nuclear materials, 246(1), 1997, pp. 9-16

Authors: VONBORANY J GROTZSCHEL R HEINIG KH MARKWITZ A MATZ W SCHMIDT B SKORUPA W
Citation: J. Vonborany et al., MULTIMODAL IMPURITY REDISTRIBUTION AND NANOCLUSTER FORMATION IN GE IMPLANTED SILICON DIOXIDE FILMS, Applied physics letters, 71(22), 1997, pp. 3215-3217

Authors: VONBORANY J SCHMIDT B GROTZSCHEL R
Citation: J. Vonborany et al., THE APPLICATION OF HIGH-ENERGY ION-IMPLANTATION FOR SILICON RADIATIONDETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 377(2-3), 1996, pp. 514-520

Authors: GROTZSCHEL R MADER M KREISSIG U GRIGULL S ASSMANN W PARHOFER S
Citation: R. Grotzschel et al., COMPOSITION ANALYSIS OF NDXFEYB THIN-FILMS BY RES AND HEAVY-ION ERDA, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 139-143

Authors: HENKE D TYRROFF H GROTZSCHEL R WIRTH H
Citation: D. Henke et al., SLOW, HIGHLY-CHARGED IONS FROM A 7.25 GHZ ECR ION-SOURCE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 98(1-4), 1995, pp. 528-531

Authors: BEHRISCH R MARTINELLI AP GRIGULL S GROTZSCHEL R KREISSIG U HILDEBRANDT D SCHNEIDER W
Citation: R. Behrisch et al., SURFACE-LAYER COMPOSITION OF THE JET VESSEL WALLS, Journal of nuclear materials, 222, 1995, pp. 590-594

Authors: FRIEDRICH M BURGER W GROTZSCHEL R HENKE D SUN G TURUC S HEBERT D ROTHE T STOLZ W
Citation: M. Friedrich et al., ACCELERATOR MASS-SPECTROMETRY AT THE ROSSENDORF TANDEM ACCELERATORS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 92(1-4), 1994, pp. 58-60

Authors: KREISSIG U GROTZSCHEL R BEHRISCH R
Citation: U. Kreissig et al., SIMULTANEOUS MEASUREMENT OF THE HYDROGEN ISOTOPES H, D, T AND HE-3 WITH HIERD, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 71-74

Authors: SCHUMANN J ELEFANT D GLADUN C HEINRICH A PITSCHKE W LANGE H HENRION W GROTZSCHEL R
Citation: J. Schumann et al., POLYCRYSTALLINE IRIDIUM SILICIDE FILMS - PHASE-FORMATION, ELECTRICAL AND OPTICAL-PROPERTIES, Physica status solidi. a, Applied research, 145(2), 1994, pp. 429-439

Authors: HEERA V KOGLER R SKORUPA W GROTZSCHEL R
Citation: V. Heera et al., DOSE-RATE DEPENDENCE OF THE ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 538-542

Authors: DVURECHENSKII AV KARANOVICH AA RYBIN AV GROTZSCHEL R
Citation: Av. Dvurechenskii et al., PARAMAGNETIC DEFECTS IN SILICON IRRADIATED WITH 40 MEV AS IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 620-623
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