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PANEPUCCI R
OSOWSKI ML
TURNBULL DA
GU SQ
BISHOP SG
COLEMAN JJ
ADESIDA I
Citation: R. Panepucci et al., INHOMOGENEITY IN THE FABRICATION OF INGAAS GAAS QUANTUM-WIRE ARRAYS BY SELECTIVE-AREA METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Superlattices and microstructures, 20(1), 1996, pp. 111-116
Authors:
TURNBULL DA
LI X
GU SQ
REUTER EE
COLEMAN JJ
BISHOP SG
Citation: Da. Turnbull et al., LUMINESCENCE STUDIES OF GAN GROWN ON GAN AND GAN ALN BUFFER LAYERS BYMETALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Journal of applied physics, 80(8), 1996, pp. 4609-4614
Authors:
LI X
GU SQ
REUTER EE
VERDEYEN JT
BISHOP SG
COLEMAN JJ
Citation: X. Li et al., EFFECT OF E-BEAM IRRADIATION ON A P-N-JUNCTION GAN LIGHT-EMITTING DIODE, Journal of applied physics, 80(5), 1996, pp. 2687-2690
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Authors:
PANEPUCCI R
YOUTSEY C
TURNBULL DA
GU SQ
CANEAU C
BISHOP SG
ADESIDA I
Citation: R. Panepucci et al., FABRICATION OF INP INGAAS QUANTUM WIRES BY FREE CL-2/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2752-2756
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Authors:
GU SQ
RAMACHANDRAN S
REUTER EE
TURNBULL DA
VERDEYEN JT
BISHOP SG
Citation: Sq. Gu et al., PHOTOLUMINESCENCE AND EXCITATION SPECTROSCOPY OF ER-DOPED AS2S3 GLASS- NOVEL BROAD-BAND EXCITATION MECHANISM, Journal of applied physics, 77(7), 1995, pp. 3365-3371
Authors:
GU SQ
LIU X
COVINGTON M
REUTER E
CHANG H
PANEPUCCI R
ADESIDA I
BISHOP SG
CANEAU C
BHAT R
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