Citation: Zz. Gu et al., LONG-TERM CHANGES IN BRAIN CHOLINERGIC MARKERS AND NERVE GROWTH-FACTOR LEVELS AFTER PARTIAL IMMUNOLESION, Brain research, 801(1-2), 1998, pp. 190-197
Authors:
GU ZZ
SATO O
IYODA T
HASHIMOTO K
FUJISHIMA A
Citation: Zz. Gu et al., SPIN SWITCHING EFFECT IN NICKEL NITROPRUSSIDE - DESIGN OF A MOLECULARSPIN DEVICE BASED ON SPIN-EXCHANGE INTERACTION, Chemistry of materials, 9(5), 1997, pp. 1092-1097
Authors:
SATO O
GU ZZ
ETOH H
ICHIYANAGI J
IYODA T
FUJISHIMA A
HASHIMOTO K
Citation: O. Sato et al., ELECTROCHEMICAL SYNTHESES AND ELECTROCHROMIC PROPERTIES OF CHROMIUM CYANIDE MAGNETIC THIN-FILMS, Chemistry Letters, (1), 1997, pp. 37-38
Authors:
GU ZZ
PAN YC
CUI JK
KLEBUC MJ
SHENAQ S
LIU PK
Citation: Zz. Gu et al., GENE-EXPRESSION AND APOPTOSIS IN THE SPINAL-CORD NEURONS AFTER SCIATIC-NERVE INJURY, Neurochemistry international, 30(4-5), 1997, pp. 417-426
Authors:
ROSSNER S
WORTWEIN G
GU ZZ
YU J
SCHLIEBS R
BIGL V
PEREZPOLO JR
Citation: S. Rossner et al., CHOLINERGIC CONTROL OF NERVE GROWTH-FACTOR IN ADULT RATS - EVIDENCE FROM CORTICAL CHOLINERGIC DEAFFERENTATION AND CHRONIC DRUG-TREATMENT, Journal of neurochemistry, 69(3), 1997, pp. 947-953
Authors:
GU ZZ
SATO O
IYODA T
HASHIMOTO K
FUJISHIMA A
Citation: Zz. Gu et al., SYNTHESES AND MAGNETIC-PROPERTIES OF DYE INCLUDED ORGANOMETALLIC MAGNETS - DAMS[MCR(OX)(3)], Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals, 285, 1996, pp. 469-474
Authors:
GU ZZ
SATO O
IYODA T
HASHIMOTO K
FUJISHIMA A
Citation: Zz. Gu et al., MOLECULAR-LEVEL DESIGN OF A PHOTOINDUCED MAGNETIC SPIN COUPLING SYSTEM - NICKEL NITROPRUSSIDE, Journal of physical chemistry, 100(47), 1996, pp. 18289-18291
Citation: Xm. Yang et al., ATOMIC-FORCE MICROSCOPY AND UV-VISIBLE ABSORPTION-SPECTROSCOPY STUDIES OF ZNO NANOMETER COLLOIDAL PARTICLES SUPPORTED ON GRAPHITE, Applied physics. A, Solids and surfaces, 59(2), 1994, pp. 115-117
Citation: Zz. Gu et al., STUDY OF BANDS AND CONDUCTIVITIES OF CU-TCNQ AND AG-TCNQ FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 20(3), 1993, pp. 298-300