Authors: EGGER P GIESER H KROPF R GUGGENMOS X

Citation: P. Egger et al., ESD MONITOR CIRCUIT - A TOOL TO INVESTIGATE THE SUSCEPTIBILITY AND FAILURE MECHANISMS OF THE CHARGED DEVICE MODEL, Quality and reliability engineering international, 12(4), 1996, pp. 265-270

Authors: BRODBECK T BAUCH H GUGGENMOS X WAGNER R

Citation: T. Brodbeck et al., REPRODUCIBILITY OF FIELD FAILURES BY ESD MODELS - COMPARISON OF HBM, SOCKETED CDM ON NON-SOCKETED CDM, Microelectronics and reliability, 36(11-12), 1996, pp. 1719-1722

Authors: MUSSHOFF C WOLF H GIESER H EGGER P GUGGENMOS X

Citation: C. Musshoff et al., RISETIME EFFECTS OF HBM AND SQUARE PULSES ON THE FAILURE THRESHOLDS OF GGNMOS-TRANSISTORS, Microelectronics and reliability, 36(11-12), 1996, pp. 1743-1746