Citation: X. Gui et Jw. Haslett, A NEW PARAMETER FOR ERROR ESTIMATION AND TIME-STEP CONTROL IN TLM DIFFUSION MODELING, Numerical heat transfer. Part B, Fundamentals, 33(2), 1998, pp. 235-249
Citation: X. Gui et al., SIMULATION OF TEMPERATURE CYCLING EFFECTS ON ELECTROMIGRATION BEHAVIOR UNDER PULSED CURRENT STRESS, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 380-386
Citation: X. Gui et al., A GENERAL EXPRESSION OF BOUNDARY-CONDITIONS IN TLM DIFFUSION MODELING, International journal of numerical modelling, 9(6), 1996, pp. 459-461
Citation: X. Gui et al., TLM TREATMENT OF A GENERAL DIFFUSION FLUX BOUNDARY-CONDITION, International journal of numerical modelling, 9(5), 1996, pp. 327-333
Citation: X. Gui et al., NUMERICAL-SOLUTION OF THE ELECTROMIGRATION BOUNDARY-VALUE PROBLEM UNDER PULSED DC CONDITIONS, Journal of applied physics, 80(9), 1996, pp. 4948-4951
Citation: X. Gui et al., SIMULATION OF ELECTROMIGRATION IN THIN-FILM DIFFUSION-BARRIERS BY THETRANSMISSION-LINE MATRIX-METHOD, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 2100-2104
Citation: X. Gui et al., GRAIN-BOUNDARY DIFFUSION MODELING AND EFFICIENCY EVALUATION OF THIN-FILM DIFFUSION-BARRIERS CONSIDERING MICROSTRUCTURE EFFECTS, Journal of applied physics, 78(7), 1995, pp. 4438-4443
Citation: X. Gui et al., THERMAL SIMULATION OF THIN-FILM INTERCONNECT FAILURE CAUSED BY HIGH-CURRENT PULSES, I.E.E.E. transactions on electron devices, 42(7), 1995, pp. 1386-1388
Citation: X. Gui et al., THERMAL SIMULATION OF ENERGETIC TRANSIENTS IN MULTILEVEL METALLIZATION SYSTEMS, Electronics Letters, 31(22), 1995, pp. 1954-1956
Citation: X. Gui et al., 3-DIMENSIONAL THERMAL-ANALYSIS OF HIGH-DENSITY TRIPLE-LEVEL INTERCONNECTION STRUCTURES IN VERY LARGE-SCALE INTEGRATED-CIRCUITS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 59-62
Citation: X. Gui et al., 3-DIMENSIONAL SIMULATION OF IMPURITY DIFFUSION IN THIN-FILM DIFFUSION-BARRIERS, Journal of electronic materials, 23(12), 1994, pp. 1309-1314
Citation: X. Gui et al., THE EFFECTS OF SURFACE METALLIZATION ON THE THERMAL-BEHAVIOR OF GAAS MICROWAVE-POWER DEVICES, IEEE transactions on microwave theory and techniques, 42(2), 1994, pp. 342-344
Citation: X. Gui et al., TRANSMISSION-LINE MATRIX-METHOD FOR SOLVING THE MULTIDIMENSIONAL CONTINUITY EQUATION, International journal of numerical modelling, 6(3), 1993, pp. 233-236
Citation: X. Gui et Pw. Webb, A COMPARATIVE-STUDY OF 2 TLM NETWORKS FOR THE MODELING OF DIFFUSION-PROCESSES, International journal of numerical modelling, 6(2), 1993, pp. 161-164
Citation: X. Gui et al., TRANSMISSION-LINE-MATRIX MODELING OF GRAIN-BOUNDARY DIFFUSION IN THIN-FILMS, Journal of applied physics, 74(12), 1993, pp. 7173-7180
Authors:
HUANG FY
SALVADOR A
GUI X
TERAGUCHI N
MORKOC H
Citation: Fy. Huang et al., RESONANT-CAVITY GAAS INGAAS/ALAS PHOTODIODES WITH A PERIODIC ABSORBERSTRUCTURE/, Applied physics letters, 63(2), 1993, pp. 141-143
Authors:
WANG Z
LIN ME
BISWAS D
MAZHARI B
TERAGUCHI N
FAN Z
GUI X
MORKOC H
Citation: Z. Wang et al., SI3N4 SI/N-GAAS CAPACITOR WITH MINIMUM INTERFACE DENSITY IN THE 10(10) EV(-1) CM(-2) RANGE/, Applied physics letters, 62(23), 1993, pp. 2977-2979