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Results: 1-18 |
Results: 18

Authors: GUI X HASLETT JW
Citation: X. Gui et Jw. Haslett, A NEW PARAMETER FOR ERROR ESTIMATION AND TIME-STEP CONTROL IN TLM DIFFUSION MODELING, Numerical heat transfer. Part B, Fundamentals, 33(2), 1998, pp. 235-249

Authors: GUI X HASLETT JW DEW SK BRETT MJ
Citation: X. Gui et al., SIMULATION OF TEMPERATURE CYCLING EFFECTS ON ELECTROMIGRATION BEHAVIOR UNDER PULSED CURRENT STRESS, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 380-386

Authors: GUI X NG TS
Citation: X. Gui et Ts. Ng, PERFORMANCE OF DS SS SYSTEM UNDER ON-OFF WIDE-BAND JAMMING, Electronics Letters, 33(7), 1997, pp. 557-559

Authors: GUI X DEW SK BRETT MJ
Citation: X. Gui et al., A GENERAL EXPRESSION OF BOUNDARY-CONDITIONS IN TLM DIFFUSION MODELING, International journal of numerical modelling, 9(6), 1996, pp. 459-461

Authors: GUI X DEW SK BRETT MJ
Citation: X. Gui et al., TLM TREATMENT OF A GENERAL DIFFUSION FLUX BOUNDARY-CONDITION, International journal of numerical modelling, 9(5), 1996, pp. 327-333

Authors: GUI X DEW SK BRETT MJ
Citation: X. Gui et al., NUMERICAL-SOLUTION OF THE ELECTROMIGRATION BOUNDARY-VALUE PROBLEM UNDER PULSED DC CONDITIONS, Journal of applied physics, 80(9), 1996, pp. 4948-4951

Authors: GUI X DEW SK BRETT MJ
Citation: X. Gui et al., SIMULATION OF ELECTROMIGRATION IN THIN-FILM DIFFUSION-BARRIERS BY THETRANSMISSION-LINE MATRIX-METHOD, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 2100-2104

Authors: GUI X FRIEDRICH LJ DEW SK BRETT MJ SMY T
Citation: X. Gui et al., GRAIN-BOUNDARY DIFFUSION MODELING AND EFFICIENCY EVALUATION OF THIN-FILM DIFFUSION-BARRIERS CONSIDERING MICROSTRUCTURE EFFECTS, Journal of applied physics, 78(7), 1995, pp. 4438-4443

Authors: GUI X DEW SK BRETT MJ
Citation: X. Gui et al., THERMAL SIMULATION OF THIN-FILM INTERCONNECT FAILURE CAUSED BY HIGH-CURRENT PULSES, I.E.E.E. transactions on electron devices, 42(7), 1995, pp. 1386-1388

Authors: GUI X DEW SK BRETT MJ
Citation: X. Gui et al., THERMAL SIMULATION OF ENERGETIC TRANSIENTS IN MULTILEVEL METALLIZATION SYSTEMS, Electronics Letters, 31(22), 1995, pp. 1954-1956

Authors: GUI X DEW SK BRETT MJ
Citation: X. Gui et al., 3-DIMENSIONAL THERMAL-ANALYSIS OF HIGH-DENSITY TRIPLE-LEVEL INTERCONNECTION STRUCTURES IN VERY LARGE-SCALE INTEGRATED-CIRCUITS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 59-62

Authors: GUI X DEW SK BRETT MJ
Citation: X. Gui et al., 3-DIMENSIONAL SIMULATION OF IMPURITY DIFFUSION IN THIN-FILM DIFFUSION-BARRIERS, Journal of electronic materials, 23(12), 1994, pp. 1309-1314

Authors: GUI X GAO GB MORKOC H
Citation: X. Gui et al., THE EFFECTS OF SURFACE METALLIZATION ON THE THERMAL-BEHAVIOR OF GAAS MICROWAVE-POWER DEVICES, IEEE transactions on microwave theory and techniques, 42(2), 1994, pp. 342-344

Authors: GUI X GAO GB MORKOC H
Citation: X. Gui et al., TRANSMISSION-LINE MATRIX-METHOD FOR SOLVING THE MULTIDIMENSIONAL CONTINUITY EQUATION, International journal of numerical modelling, 6(3), 1993, pp. 233-236

Authors: GUI X WEBB PW
Citation: X. Gui et Pw. Webb, A COMPARATIVE-STUDY OF 2 TLM NETWORKS FOR THE MODELING OF DIFFUSION-PROCESSES, International journal of numerical modelling, 6(2), 1993, pp. 161-164

Authors: GUI X DEW SK BRETT MJ DECOGAN D
Citation: X. Gui et al., TRANSMISSION-LINE-MATRIX MODELING OF GRAIN-BOUNDARY DIFFUSION IN THIN-FILMS, Journal of applied physics, 74(12), 1993, pp. 7173-7180

Authors: HUANG FY SALVADOR A GUI X TERAGUCHI N MORKOC H
Citation: Fy. Huang et al., RESONANT-CAVITY GAAS INGAAS/ALAS PHOTODIODES WITH A PERIODIC ABSORBERSTRUCTURE/, Applied physics letters, 63(2), 1993, pp. 141-143

Authors: WANG Z LIN ME BISWAS D MAZHARI B TERAGUCHI N FAN Z GUI X MORKOC H
Citation: Z. Wang et al., SI3N4 SI/N-GAAS CAPACITOR WITH MINIMUM INTERFACE DENSITY IN THE 10(10) EV(-1) CM(-2) RANGE/, Applied physics letters, 62(23), 1993, pp. 2977-2979
Risultati: 1-18 |