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Results: 51-57/57
Authors:
ZEKENTES K
HALKIAS G
DIMOULAS A
TABATA A
BENYATTOU T
GUILLOT G
MORANTE JR
PEIRO F
CORNET A
GEORGAKILAS A
CHRISTOU A
Citation: K. Zekentes et al., MATERIALS PROBLEMS FOR THE DEVELOPMENT OF INGAAS INALAS HEMT TECHNOLOGY, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 21-25
Authors:
POGANY D
ABABOU S
GUILLOT G
LOUIS P
Citation: D. Pogany et al., DISCRETE CURRENT FLUCTUATIONS IN INP MIS STRUCTURES DUE TO DEFECTS CREATED BY BREAKDOWN DEGRADATION IN INP NATIVE-OXIDE, Microelectronic engineering, 22(1-4), 1993, pp. 119-122
Authors:
POGANY D
ABABOU S
GUILLOT G
LOUIS P
Citation: D. Pogany et al., STUDY OF DISCRETE CURRENT FLUCTUATIONS IN THE METAL INP NATIVE-OXIDE INP STRUCTURES, Physica status solidi. a, Applied research, 136(2), 1993, pp. 131-134
Authors:
MONEGER S
BALTAGI Y
BENYATTOU T
TABATA A
RAGOT B
GUILLOT G
GEORGAKILAS A
ZEKENTES K
HALKIAS G
Citation: S. Moneger et al., PHOTOREFLECTANCE STUDIES OF LATTICE-MATCHED AND STRAINED INGAAS INALAS SINGLE QUANTUM-WELLS, Journal of applied physics, 74(2), 1993, pp. 1437-1439
Authors:
GEORGAKILAS A
HALKIAS G
CHRISTOU A
KORNILIOS N
PAPAVASSILIOU C
ZEKENTES K
KONSTANTINIDIS G
PEIRO F
CORNET A
ABABOU S
TABATA A
GUILLOT G
Citation: A. Georgakilas et al., A COMPREHENSIVE OPTIMIZATION OF INAIAS MOLECULAR-BEAM EPITAXY FOR INGAAS INAIAS HEMT TECHNOLOGY/, Journal of the Electrochemical Society, 140(5), 1993, pp. 1503-1509
Authors:
MONEGER S
TABATA A
BRU C
GUILLOT G
GEORGAKILAS A
ZEKENTES K
HALKIAS G
Citation: S. Moneger et al., ROOM-TEMPERATURE PHOTOREFLECTANCE AS AN EFFICIENT TOOL FOR STUDY OF THE CRYSTALLINE QUALITY OF INALAS LAYERS GROWN ON INP SUBSTRATES, Applied physics letters, 63(12), 1993, pp. 1654-1656
Authors:
SOUIFI A
BREMOND G
BENYATTOU T
GUILLOT G
DUTARTRE D
WARREN P
Citation: A. Souifi et al., BAND-GAP NARROWING DETERMINATION BY PHOTOLUMINESCENCE ON STRAINED B-DOPED SI0.82GE0.18 LAYERS GROWN ON SI, Applied physics letters, 62(23), 1993, pp. 2986-2988