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Results: 1-8 |
Results: 8
SOME CHARACTERISTICS OF ASIZNGA PAIRS INDUCED IN P-TYPE GAAS(ZN) BY RADIATION-THERMAL ACTION
Authors: GLINCHUK KD GUROSHEV VI PROKHOROVICH AV
Citation: Kd. Glinchuk et al., SOME CHARACTERISTICS OF ASIZNGA PAIRS INDUCED IN P-TYPE GAAS(ZN) BY RADIATION-THERMAL ACTION, Semiconductors, 30(7), 1996, pp. 642-645
DIAGNOSING THE BUFFER LAYERS OF MULTILAYER EPITAXIAL STRUCTURES OF GAAS BY A PHOTOLUMINESCENCE METHOD
Authors: BELOUSOV PS GUROSHEV VI TAGER AS FEDOROV YY
Citation: Ps. Belousov et al., DIAGNOSING THE BUFFER LAYERS OF MULTILAYER EPITAXIAL STRUCTURES OF GAAS BY A PHOTOLUMINESCENCE METHOD, Semiconductors, 30(12), 1996, pp. 1151-1153
ON THE CORRELATION BETWEEN THE INTENSITY DISTRIBUTION OF THE 1.49-EV CARBON LUMINESCENCE BAND AND THE ARSENIC-VACANCY CONCENTRATION IN SEMIINSULATING UNDOPED GAAS CRYSTALS
Authors: GLINCHUK KD GUROSHEV VI KLADKO VP PROKHOROVICH AV
Citation: Kd. Glinchuk et al., ON THE CORRELATION BETWEEN THE INTENSITY DISTRIBUTION OF THE 1.49-EV CARBON LUMINESCENCE BAND AND THE ARSENIC-VACANCY CONCENTRATION IN SEMIINSULATING UNDOPED GAAS CRYSTALS, Kristallografia, 40(1), 1995, pp. 113-116
COMPOSITION DEPENDENCE OF THE RADIATION STABILITY OF THE LUMINESCENCEEMITTED BY SOLID-SOLUTIONS OF III-V COMPOUNDS
Authors: GLINCHUK KD GUROSHEV VI PROKHOROVICH AV
Citation: Kd. Glinchuk et al., COMPOSITION DEPENDENCE OF THE RADIATION STABILITY OF THE LUMINESCENCEEMITTED BY SOLID-SOLUTIONS OF III-V COMPOUNDS, Semiconductors, 27(8), 1993, pp. 772-773
FACTORS RESPONSIBLE FOR THE DIFFERENCE IN THE DOSE DEPENDENCES OF THEINTENSITIES OF DIFFERENT LUMINESCENCE BANDS OF III-V SEMICONDUCTOR COMPOUNDS BOMBARDED WITH FAST PARTICLES
Authors: VINNIK EV GLINCHUK KD GUROSHEV VI PROKHOROVICH AV
Citation: Ev. Vinnik et al., FACTORS RESPONSIBLE FOR THE DIFFERENCE IN THE DOSE DEPENDENCES OF THEINTENSITIES OF DIFFERENT LUMINESCENCE BANDS OF III-V SEMICONDUCTOR COMPOUNDS BOMBARDED WITH FAST PARTICLES, Semiconductors, 27(6), 1993, pp. 560-562
DEPENDENCE OF THE RADIATION STABILITY OF THE INTENSITY OF LUMINESCENCE EMITTED BY SOLID-SOLUTIONS OF III-V COMPOUNDS ON THEIR COMPOSITION
Authors: GLINCHUK KD GUROSHEV VI PROKHOROVICH AV
Citation: Kd. Glinchuk et al., DEPENDENCE OF THE RADIATION STABILITY OF THE INTENSITY OF LUMINESCENCE EMITTED BY SOLID-SOLUTIONS OF III-V COMPOUNDS ON THEIR COMPOSITION, Semiconductors, 27(6), 1993, pp. 586-587
MECHANISM FOR RADIATION-STIMULATED CHANGES OF THE POSITION OF THE MAXIMUM OF AN IMPURITY LUMINESCENCE BAND OF GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE
Authors: VINNIK EV GLINCHUK KD GUROSHEV VI PROKHOROVICH AV
Citation: Ev. Vinnik et al., MECHANISM FOR RADIATION-STIMULATED CHANGES OF THE POSITION OF THE MAXIMUM OF AN IMPURITY LUMINESCENCE BAND OF GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE, Semiconductors, 27(5), 1993, pp. 463-465
LUMINESCENCE-CENTERS INDUCED IN P-TYPE GAASZN BY RADIATION AND HEAT-TREATMENT
Authors: VINNIK EV GLINCHUK KD GUROSHEV VI PROKHOROVICH AV
Citation: Ev. Vinnik et al., LUMINESCENCE-CENTERS INDUCED IN P-TYPE GAASZN BY RADIATION AND HEAT-TREATMENT, Semiconductors, 27(4), 1993, pp. 338-340
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