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Results: 1-17 |
Results: 17
NITROGEN ENGINEERING OF ULTRATHIN OXYNITRIDES BY A THERMAL NO O-2/NO PROCESS/
Authors: GUSEV EP LU HC GARFUNKEL E GUSTAFSSON T GREEN ML BRASEN D LENNARD WN
Citation: Ep. Gusev et al., NITROGEN ENGINEERING OF ULTRATHIN OXYNITRIDES BY A THERMAL NO O-2/NO PROCESS/, Journal of applied physics, 84(5), 1998, pp. 2980-2982
INTERMIXING AT THE TANTALUM OXIDE SILICON INTERFACE IN GATE DIELECTRIC STRUCTURES/
Authors: ALERS GB WERDER DJ CHABAL Y LU HC GUSEV EP GARFUNKEL E GUSTAFSSON T URDAHL RS
Citation: Gb. Alers et al., INTERMIXING AT THE TANTALUM OXIDE SILICON INTERFACE IN GATE DIELECTRIC STRUCTURES/, Applied physics letters, 73(11), 1998, pp. 1517-1519
ON THE BEHAVIOR OF DEUTERIUM IN ULTRATHIN SIO2-FILMS UPON THERMAL ANNEALING
Authors: BAUMVOL IJR GUSEV EP STEDILE FC FREIRE FL GREEN ML BRASEN D
Citation: Ijr. Baumvol et al., ON THE BEHAVIOR OF DEUTERIUM IN ULTRATHIN SIO2-FILMS UPON THERMAL ANNEALING, Applied physics letters, 72(4), 1998, pp. 450-452
COMPOSITIONAL AND MECHANISTIC ASPECTS OF ULTRATHIN OXYNITRIDE FILM GROWTH ON SI(100)
Authors: LU HC GUSEV EP GUSTAFSSON T BRASEN D GREEN ML GARFUNKEL E
Citation: Hc. Lu et al., COMPOSITIONAL AND MECHANISTIC ASPECTS OF ULTRATHIN OXYNITRIDE FILM GROWTH ON SI(100), Microelectronic engineering, 36(1-4), 1997, pp. 29-32
THE COMPOSITION OF ULTRATHIN SILICON OXYNITRIDES THERMALLY GROWN IN NITRIC-OXIDE
Authors: GUSEV EP LU HC GUSTAFSSON T GARFUNKEL E GREEN ML BRASEN D
Citation: Ep. Gusev et al., THE COMPOSITION OF ULTRATHIN SILICON OXYNITRIDES THERMALLY GROWN IN NITRIC-OXIDE, Journal of applied physics, 82(2), 1997, pp. 896-898
EFFECT OF NEAR-INTERFACIAL NITROGEN ON THE OXIDATION BEHAVIOR OF ULTRATHIN SILICON OXYNITRIDES
Authors: LU HC GUSEV EP GUSTAFSSON T GARFUNKEL E
Citation: Hc. Lu et al., EFFECT OF NEAR-INTERFACIAL NITROGEN ON THE OXIDATION BEHAVIOR OF ULTRATHIN SILICON OXYNITRIDES, Journal of applied physics, 81(10), 1997, pp. 6992-6995
ULTRATHIN SIOXNY BY RAPID THERMAL HEATING OF SILICON IN N-2 AT T=760-1050-DEGREES-C
Authors: GREEN ML SORSCH T FELDMAN LC GUSEV EP GARFUNKEL E LU HC GUSTAFSSON T
Citation: Ml. Green et al., ULTRATHIN SIOXNY BY RAPID THERMAL HEATING OF SILICON IN N-2 AT T=760-1050-DEGREES-C, Applied physics letters, 71(20), 1997, pp. 2978-2980
STRUCTURAL STUDIES OF OXIDE SURFACES
Authors: GUSTAFSSON T GARFUNKEL E GUSEV EP HABERLE P LU HC ZHOU JB
Citation: T. Gustafsson et al., STRUCTURAL STUDIES OF OXIDE SURFACES, Surface review and letters, 3(4), 1996, pp. 1561-1565
THERMAL-BEHAVIOR OF THE CLEAN NI(111) SURFACE
Authors: GUSEV EP LU HC GARFUNKEL E GUSTAFSSON T
Citation: Ep. Gusev et al., THERMAL-BEHAVIOR OF THE CLEAN NI(111) SURFACE, Surface review and letters, 3(3), 1996, pp. 1349-1353
THE INITIAL OXIDATION OF SILICON - NEW ION-SCATTERING RESULTS IN THE ULTRA-THIN REGIME
Authors: GUSEV EP LU HC GUSTAFSSON T GARFUNKEL E
Citation: Ep. Gusev et al., THE INITIAL OXIDATION OF SILICON - NEW ION-SCATTERING RESULTS IN THE ULTRA-THIN REGIME, Applied surface science, 104, 1996, pp. 329-334
A MEIS STUDY OF THERMAL EFFECTS ON THE NI(111) SURFACE
Authors: LU HC GUSEV EP GARFUNKEL E GUSTAFSSON T
Citation: Hc. Lu et al., A MEIS STUDY OF THERMAL EFFECTS ON THE NI(111) SURFACE, Surface science, 352, 1996, pp. 21-24
AN ION-SCATTERING STUDY OF THE INTERACTION OF OXYGEN WITH SI(111) - SURFACE ROUGHENING AND OXIDE-GROWTH
Authors: LU HC GUSEV EP GARFUNKEL E GUSTAFSSON T
Citation: Hc. Lu et al., AN ION-SCATTERING STUDY OF THE INTERACTION OF OXYGEN WITH SI(111) - SURFACE ROUGHENING AND OXIDE-GROWTH, Surface science, 351(1-3), 1996, pp. 111-128
HIGH-RESOLUTION ION-SCATTERING STUDY OF SILICON OXYNITRIDATION
Authors: LU HC GUSEV EP GUSTAFSSON T GARFUNKEL E GREEN ML BRASEN D FELDMAN LC
Citation: Hc. Lu et al., HIGH-RESOLUTION ION-SCATTERING STUDY OF SILICON OXYNITRIDATION, Applied physics letters, 69(18), 1996, pp. 2713-2715
GROWTH-MECHANISM OF THIN SILICON-OXIDE FILMS ON SI(100) STUDIED BY MEDIUM-ENERGY ION-SCATTERING
Authors: GUSEV EP LU HC GUSTAFSSON T GARFUNKEL E
Citation: Ep. Gusev et al., GROWTH-MECHANISM OF THIN SILICON-OXIDE FILMS ON SI(100) STUDIED BY MEDIUM-ENERGY ION-SCATTERING, Physical review. B, Condensed matter, 52(3), 1995, pp. 1759-1775
AN ISOTOPIC LABELING STUDY OF THE GROWTH OF THIN OXIDE-FILMS ON SI(100)
Authors: LU HC GUSTAFSSON T GUSEV EP GARFUNKEL E
Citation: Hc. Lu et al., AN ISOTOPIC LABELING STUDY OF THE GROWTH OF THIN OXIDE-FILMS ON SI(100), Applied physics letters, 67(12), 1995, pp. 1742-1744
MECHANISM OF SUBMONOLAYER OXIDE FORMATION ON SILICON SURFACES UPON THERMAL-OXIDATION
Authors: BORMAN VD GUSEV EP LEBEDINSKI YY TROYAN VI
Citation: Vd. Borman et al., MECHANISM OF SUBMONOLAYER OXIDE FORMATION ON SILICON SURFACES UPON THERMAL-OXIDATION, Physical review. B, Condensed matter, 49(8), 1994, pp. 5415-5423
ON A MECHANISM OF SURFACE OXIDE FORMATION NEAR THE NUCLEATION THRESHOLD
Authors: BORMAN VD GUSEV EP DEVYATKO YN TRONIN VN TROYAN VI
Citation: Vd. Borman et al., ON A MECHANISM OF SURFACE OXIDE FORMATION NEAR THE NUCLEATION THRESHOLD, Surface science, 301(1-3), 1994, pp. 120000239-120000244
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