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Results: 2
EFFECT OF POLYSILICON DEPLETION EFFECT ON SERIES RESISTANCE AND TRANSCONDUCTANCE OF MOS-TRANSISTORS AT 4.2 K
Authors: GUTIERREZD EA
Citation: Ea. Gutierrezd, EFFECT OF POLYSILICON DEPLETION EFFECT ON SERIES RESISTANCE AND TRANSCONDUCTANCE OF MOS-TRANSISTORS AT 4.2 K, Electronics Letters, 34(12), 1998, pp. 1264-1265
A 4.2 K VERY HIGH-GAIN MODULATION FACTOR SILICON DETECTOR MODULATOR/
Authors: GUTIERREZD EA KOSHEVAYA SV KOLEV P DEEN J
Citation: Ea. Gutierrezd et al., A 4.2 K VERY HIGH-GAIN MODULATION FACTOR SILICON DETECTOR MODULATOR/, Journal de physique. IV, 6(C3), 1996, pp. 213-218
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