Authors: MCKINNON WR MCALISTER SP ABID Z GUZZO EE

Citation: Wr. Mckinnon et al., CURRENT BLOCKING IN INP INGAAS DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS/, Journal of applied physics, 79(5), 1996, pp. 2771-2778

Authors: MCKINNON WR MCALISTER SP ABID Z GUZZO EE LAFRAMBOISE S

Citation: Wr. Mckinnon et al., A COMPARISON OF THE DC AND RF CHARACTERISTICS OF SINGLE AND DOUBLE INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Canadian journal of physics, 74, 1996, pp. 239-242

Authors: GUZZO EE PRESTON JS

Citation: Ee. Guzzo et Js. Preston, LASER-ABLATION AS A PROCESSING TECHNIQUE FOR METALLIC AND POLYMER LAYERED STRUCTURES, IEEE transactions on semiconductor manufacturing, 7(1), 1994, pp. 73-78

Authors: ABID Z MCALISTER SP MCKINNON WR GUZZO EE

Citation: Z. Abid et al., TEMPERATURE-DEPENDENT DC CHARACTERISTICS OF AN INP INGAAS INGAASP HBT, IEEE electron device letters, 15(5), 1994, pp. 178-180

Authors: MCALISTER SP MCKINNON WR ABID Z GUZZO EE

Citation: Sp. Mcalister et al., HYSTERESIS IN THE SWITCHING OF HOT-ELECTRONS IN INP INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of applied physics, 76(4), 1994, pp. 2559-2561