Authors: Cheylan, S Elliman, RG Gaff, K Durandet, A

Citation: S. Cheylan et al., Luminescence from Si nanocrystals in silica deposited by helicon activatedreactive evaporation, APPL PHYS L, 78(12), 2001, pp. 1670-1672

Authors: Weijers, TDM Gaff, K Timmers, H Ophel, TR Elliman, RG

Citation: Tdm. Weijers et al., Heavy-ion elastic-recoil detection analysis of doped-silica films for integrated photonics, NUCL INST B, 161, 2000, pp. 624-628

Authors: Gaff, K Durandet, A Weijers, T Love, J Boswell, R

Citation: K. Gaff et al., Strong photosensitivity in tin-doped silica films, ELECTR LETT, 36(9), 2000, pp. 842-843

Authors: Gaff, K Durandet, A Wieijers, T Love, J Boswell, R

Citation: K. Gaff et al., Strong photosensitivity in tin-doped silica films (vol 36, pg 842, 2000), ELECTR LETT, 36(24), 2000, pp. 2053-2053

Authors: Deenapanray, PNK Tan, HH Cohen, MI Gaff, K Petravic, M Jagadish, C

Citation: Pnk. Deenapanray et al., Silane flow rate dependence of SiOx cap layer induced impurity-free intermixing of GaAs/AlGaAs quantum wells, J ELCHEM SO, 147(5), 2000, pp. 1950-1956