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Results: 1-14 |
Results: 14
Optical properties and lasing in (Ln, Al)GaN structures
Authors: Bidnyk, S Gainer, GH Shee, SK Lam, JB Little, BD Sugahara, T Krasinski, J Kwon, YH Park, GH Hwang, SJ Song, JJ Bulman, GE Kong, HS
Citation: S. Bidnyk et al., Optical properties and lasing in (Ln, Al)GaN structures, PHYS ST S-A, 183(1), 2001, pp. 105-109
Well-thickness dependence of emission from GaN/AlGaN separate confinement heterostructures
Authors: Gainer, GH Kwon, YH Lam, JB Bidnyk, S Kalashyan, A Song, JJ Choi, SC Yang, GM
Citation: Gh. Gainer et al., Well-thickness dependence of emission from GaN/AlGaN separate confinement heterostructures, APPL PHYS L, 78(24), 2001, pp. 3890-3892
Dynamics of anomalous optical transitions in AlxGa1-xN alloys
Authors: Cho, YH Gainer, GH Lam, JB Song, JJ Yang, W Jhe, W
Citation: Yh. Cho et al., Dynamics of anomalous optical transitions in AlxGa1-xN alloys, PHYS REV B, 61(11), 2000, pp. 7203-7206
Linear and nonlinear optical properties of InxGa1-xN/GaN heterostructures
Authors: Cho, YH Schmidt, TJ Bidnyk, S Gainer, GH Song, JJ Keller, S Mishra, UK DenBaars, SP
Citation: Yh. Cho et al., Linear and nonlinear optical properties of InxGa1-xN/GaN heterostructures, PHYS REV B, 61(11), 2000, pp. 7571-7588
Microstructure-based lasing in GaN/AlGaN separate confinement heterostructures
Authors: Bidnyk, S Lam, JB Little, BD Gainer, GH Kwon, YH Song, JJ Bulman, GE Kong, HS
Citation: S. Bidnyk et al., Microstructure-based lasing in GaN/AlGaN separate confinement heterostructures, MRS I J N S, 5, 2000, pp. NIL_568-NIL_573
Dynamics of anomalous temperature-induced emission shift in MOCVD-grown (Al, In)GaN thin films
Authors: Cho, YH Gainer, GH Lam, JB Song, JJ Yang, W Jhe, W
Citation: Yh. Cho et al., Dynamics of anomalous temperature-induced emission shift in MOCVD-grown (Al, In)GaN thin films, MRS I J N S, 5, 2000, pp. NIL_685-NIL_690
Comparison study of structural and optical properties of InxGa1-xN/GaN quantum wells with different in compositions
Authors: Kwon, YH Gainer, GH Bidnyk, S Cho, YH Song, JJ Hansen, M DenBaars, SP
Citation: Yh. Kwon et al., Comparison study of structural and optical properties of InxGa1-xN/GaN quantum wells with different in compositions, MRS I J N S, 5, 2000, pp. NIL_840-NIL_845
MOCVD growth, stimulated emission and time-resolved PL studies of InGaN/(In)GaN MQWs: well and barrier thickness dependence
Authors: Shee, SK Kwon, YH Lam, JB Gainer, GH Park, GH Hwang, SJ Little, BD Song, JJ
Citation: Sk. Shee et al., MOCVD growth, stimulated emission and time-resolved PL studies of InGaN/(In)GaN MQWs: well and barrier thickness dependence, J CRYST GR, 221, 2000, pp. 373-377
Study of gain mechanisms in AlGaN in the temperature range of 30-300 K
Authors: Lam, JB Bidnyk, S Gainer, GH Little, BD Song, JJ Yang, W
Citation: Jb. Lam et al., Study of gain mechanisms in AlGaN in the temperature range of 30-300 K, APPL PHYS L, 77(25), 2000, pp. 4101-4103
Time-resolved study of yellow and blue luminescence in Si- and Mg-doped GaN
Authors: Kwon, YH Shee, SK Gainer, GH Park, GH Hwang, SJ Song, JJ
Citation: Yh. Kwon et al., Time-resolved study of yellow and blue luminescence in Si- and Mg-doped GaN, APPL PHYS L, 76(7), 2000, pp. 840-842
Effects of carrier localization on the optical characteristics of MOCVD-grown InGaN/GaN heterostructures
Authors: Cho, YH Schmidt, TJ Fischer, AJ Bidnyk, S Gainer, GH Song, JJ Keller, S Mishra, UK DenBaars, SP Kim, DS Jhe, W
Citation: Yh. Cho et al., Effects of carrier localization on the optical characteristics of MOCVD-grown InGaN/GaN heterostructures, PHYS ST S-B, 216(1), 1999, pp. 181-185
A comparison of the optical characteristics of AlGaN, GaN, and InGaN thin films
Authors: Cho, YH Schmidt, TJ Gainer, GH Lam, JB Song, JJ Keller, S Mishra, UK DenBaars, SP Yang, W Kim, DS Jhe, W
Citation: Yh. Cho et al., A comparison of the optical characteristics of AlGaN, GaN, and InGaN thin films, PHYS ST S-B, 216(1), 1999, pp. 227-231
Structural and optical characteristics of InxGa1-xN/GaN multiple quantum wells with different In compositions
Authors: Kwon, YH Gainer, GH Bidnyk, S Cho, YH Song, JJ Hansen, M DenBaars, SP
Citation: Yh. Kwon et al., Structural and optical characteristics of InxGa1-xN/GaN multiple quantum wells with different In compositions, APPL PHYS L, 75(17), 1999, pp. 2545-2547
Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells
Authors: Schmidt, TJ Cho, YH Gainer, GH Song, JJ Keller, S Mishra, UK DenBaars, SP
Citation: Tj. Schmidt et al., Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells, APPL PHYS L, 73(5), 1999, pp. 560-562
Risultati: 1-14 |