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Results: 1-9 |
Results: 9
Carrier lifetime investigation in 4H-SiC grown by CVD and sublimation epitaxy
Authors: Grivickas, P Galeckas, A Linnros, J Syvajarvi, M Yakimova, R Grivickas, V Tellefsen, JA
Citation: P. Grivickas et al., Carrier lifetime investigation in 4H-SiC grown by CVD and sublimation epitaxy, MAT SC S PR, 4(1-3), 2001, pp. 191-194
Application of optical emission microscopy for reliability studies in 4H-SiC p(+)/n(-)/n(+) diodes
Authors: Galeckas, A Linnros, J Breitholtz, B Bleichner, H
Citation: A. Galeckas et al., Application of optical emission microscopy for reliability studies in 4H-SiC p(+)/n(-)/n(+) diodes, J APPL PHYS, 90(2), 2001, pp. 980-984
Optical characterization of excess carrier lifetime and surface recombination in 4H/6H-SiC
Authors: Galeckas, A Linnros, J Frischholz, M Grivickas, V
Citation: A. Galeckas et al., Optical characterization of excess carrier lifetime and surface recombination in 4H/6H-SiC, APPL PHYS L, 79(3), 2001, pp. 365-367
Spatially and time-resolved infrared absorption for optical and electricalcharacterization of indirect band gap semiconductors
Authors: Grivickas, V Galeckas, A Bikbajevas, V Linnros, J Tellefsen, JA
Citation: V. Grivickas et al., Spatially and time-resolved infrared absorption for optical and electricalcharacterization of indirect band gap semiconductors, THIN SOL FI, 364(1-2), 2000, pp. 181-185
Band edge absorption, carrier recombination and transport measurements in 4H-SiC epilayers
Authors: Grivickas, V Linnros, J Grivickas, P Galeckas, A
Citation: V. Grivickas et al., Band edge absorption, carrier recombination and transport measurements in 4H-SiC epilayers, MAT SCI E B, 61-2, 1999, pp. 197-201
Investigation of surface recombination and carrier lifetime in 4H/6H-SiC
Authors: Galeckas, A Linnros, J Frischholz, M Rottner, K Nordell, N Karlsson, S Grivickas, V
Citation: A. Galeckas et al., Investigation of surface recombination and carrier lifetime in 4H/6H-SiC, MAT SCI E B, 61-2, 1999, pp. 239-243
Direct observation of excess carrier distribution in 4H-SiC power diodes
Authors: Galeckas, A Tornblad, O Linnros, J Breitholtz, B
Citation: A. Galeckas et al., Direct observation of excess carrier distribution in 4H-SiC power diodes, IEEE ELEC D, 20(6), 1999, pp. 295-297
Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in SiO2
Authors: Linnros, J Lalic, N Galeckas, A Grivickas, V
Citation: J. Linnros et al., Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in SiO2, J APPL PHYS, 86(11), 1999, pp. 6128-6134
Time-resolved imaging of radiative recombination in 4H-SiC p-i-n diode
Authors: Galeckas, A Linnros, J Breitholtz, B
Citation: A. Galeckas et al., Time-resolved imaging of radiative recombination in 4H-SiC p-i-n diode, APPL PHYS L, 74(22), 1999, pp. 3398-3400
Risultati: 1-9 |