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Results: 1-8 |
Results: 8
Non-destructive diagnostic techniques for oxygen precipitates in Czochralski silicon
Authors: Bazzali, A Borionetti, G Falster, R Gambaro, D Mule'Stagno, L Olmo, M Orizio, R Porrini, M
Citation: A. Bazzali et al., Non-destructive diagnostic techniques for oxygen precipitates in Czochralski silicon, MAT SC S PR, 4(1-3), 2001, pp. 23-26
On the locking of dislocations by oxygen in silicon
Authors: Senkader, S Jurkschat, K Gambaro, D Falster, RJ Wilshaw, PR
Citation: S. Senkader et al., On the locking of dislocations by oxygen in silicon, PHIL MAG A, 81(3), 2001, pp. 759-775
Onset of slip in silicon containing oxide precipitates
Authors: Jurkschat, K Senkader, S Wilshaw, PR Gambaro, D Falster, RJ
Citation: K. Jurkschat et al., Onset of slip in silicon containing oxide precipitates, J APPL PHYS, 90(7), 2001, pp. 3219-3225
Influence of Czochralski silicon crystal growth on wafer quality: an extensive investigation using traditional and new characterization techniques
Authors: Porrini, M Collareta, P Borionetti, G Gambaro, D Fini, I
Citation: M. Porrini et al., Influence of Czochralski silicon crystal growth on wafer quality: an extensive investigation using traditional and new characterization techniques, MAT SCI E B, 73(1-3), 2000, pp. 139-144
Influence of different growth and nucleation times on optical spectra of precipitated oxygen in silicon
Authors: Borghesi, A Sassella, A Porrini, M Gambaro, D Olmo, M
Citation: A. Borghesi et al., Influence of different growth and nucleation times on optical spectra of precipitated oxygen in silicon, MAT SCI E B, 73(1-3), 2000, pp. 149-153
Crystal-related defects evolution during thin epitaxial layer growth on silicon wafers
Authors: Borionetti, G Gambaro, D Santi, S Borgini, M Godio, P Pizzini, S
Citation: G. Borionetti et al., Crystal-related defects evolution during thin epitaxial layer growth on silicon wafers, MAT SCI E B, 73(1-3), 2000, pp. 218-223
The conversion of isolated oxygen atoms to a fast diffusing species in Czochralski silicon at low temperatures
Authors: McQuaid, SA Johnson, BK Gambaro, D Falster, R Ashwin, MJ Tucker, JH
Citation: Sa. Mcquaid et al., The conversion of isolated oxygen atoms to a fast diffusing species in Czochralski silicon at low temperatures, J APPL PHYS, 86(4), 1999, pp. 1878-1887
Oxygen precipitation in silicon: Experimental studies and theoretical investigations within the classical theory of nucleation
Authors: Kelton, KF Falster, R Gambaro, D Olmo, M Cornara, M Wei, PF
Citation: Kf. Kelton et al., Oxygen precipitation in silicon: Experimental studies and theoretical investigations within the classical theory of nucleation, J APPL PHYS, 85(12), 1999, pp. 8097-8111
Risultati: 1-8 |