AAAAAA

   
Results: 1-12 |
Results: 12
Interface modification of ultrathin SiO2/Si(001) by nitric oxide treatments: a comparative electron paramagnetic resonance and nuclear reaction analysis study
Authors: Cantin, JL von Bardeleben, HJ Gosset, LG Ganem, JJ Trimaille, I
Citation: Jl. Cantin et al., Interface modification of ultrathin SiO2/Si(001) by nitric oxide treatments: a comparative electron paramagnetic resonance and nuclear reaction analysis study, J NON-CRYST, 280(1-3), 2001, pp. 143-149
Thermal oxidation of carbon-terminated and silicon-terminated 6H SiC in ultrapure oxygen: Study using stable-isotope tracking
Authors: Vickridge, IC Ganem, JJ Trimaille, I Battistig, C Szilagyi, E
Citation: Ic. Vickridge et al., Thermal oxidation of carbon-terminated and silicon-terminated 6H SiC in ultrapure oxygen: Study using stable-isotope tracking, VIDE, 55(298), 2000, pp. 488
Oxygen isotopic tracing study of the dry thermal oxidation of 6H SiC
Authors: Vickridge, IC Ganem, JJ Battistig, G Szilagyi, E
Citation: Ic. Vickridge et al., Oxygen isotopic tracing study of the dry thermal oxidation of 6H SiC, NUCL INST B, 161, 2000, pp. 462-466
Reactions in the system O-2-NO-N2O in a conventional furnace. II. Chemicalreactions between O-2 and NO (vol 146, pg 4586, 1999)
Authors: Akermark, T Ganem, JJ Trimaille, I Rigo, S
Citation: T. Akermark et al., Reactions in the system O-2-NO-N2O in a conventional furnace. II. Chemicalreactions between O-2 and NO (vol 146, pg 4586, 1999), J ELCHEM SO, 147(1), 2000, pp. 394-394
Temperature and pressure dependence of the oxygen exchange at the SiO2-Si interface, O-2 <-> SiO2, during dry thermal oxidation of silicon
Authors: Akermark, T Ganem, JJ Trimaille, I Vickridge, I Rigo, S
Citation: T. Akermark et al., Temperature and pressure dependence of the oxygen exchange at the SiO2-Si interface, O-2 <-> SiO2, during dry thermal oxidation of silicon, J PHYS CH B, 103(45), 1999, pp. 9910-9914
Electron paramagnetic resonance spectra of interface defects in nitric oxide treated Si/SiO2
Authors: von Bardeleben, HJ Cantin, JL Gosset, LG Ganem, JJ Trimaille, I Rigo, S
Citation: Hj. Von Bardeleben et al., Electron paramagnetic resonance spectra of interface defects in nitric oxide treated Si/SiO2, J NON-CRYST, 245, 1999, pp. 169-174
Time dependence of the oxygen exchange O-2 <-> SiO2 at the SiO2-Si interface during dry thermal oxidation of silicon
Authors: Akermark, T Gosset, LG Ganem, JJ Trimaille, I Vickridge, I Rigo, S
Citation: T. Akermark et al., Time dependence of the oxygen exchange O-2 <-> SiO2 at the SiO2-Si interface during dry thermal oxidation of silicon, J APPL PHYS, 86(2), 1999, pp. 1153-1155
Formation of modified Si/SiO2 interfaces with intrinsic low defect concentrations
Authors: Gosset, LG Ganem, JJ von Bardeleben, HJ Rigo, S Trimaille, I Cantin, JL Akermark, T Vickridge, IC
Citation: Lg. Gosset et al., Formation of modified Si/SiO2 interfaces with intrinsic low defect concentrations, J APPL PHYS, 85(7), 1999, pp. 3661-3665
Loss of oxygen at the Si-SiO2 interface during dry oxidation of silicon
Authors: Akermark, T Gosset, LG Ganem, JJ Trimaille, I Rigo, S
Citation: T. Akermark et al., Loss of oxygen at the Si-SiO2 interface during dry oxidation of silicon, J ELCHEM SO, 146(9), 1999, pp. 3389-3392
Reactions in the system O-2-NO-SiO2 in a conventional furnace - I. Oxygen exchange reactions
Authors: Akermark, T Ganem, JJ Trimaille, I Rigo, S
Citation: T. Akermark et al., Reactions in the system O-2-NO-SiO2 in a conventional furnace - I. Oxygen exchange reactions, J ELCHEM SO, 146(12), 1999, pp. 4580-4585
Reactions in the system O-2-NO-SiO2 in a conventional furnace - II. Chemical reactions between O-2 and NO
Authors: Akermark, T Ganem, JJ Trimaille, I Rigo, S
Citation: T. Akermark et al., Reactions in the system O-2-NO-SiO2 in a conventional furnace - II. Chemical reactions between O-2 and NO, J ELCHEM SO, 146(12), 1999, pp. 4586-4589
The study of thermal nitridation and reoxidation mechanisms using isotopictracing methods
Authors: Ganem, JJ Baumvol, JJR
Citation: Jj. Ganem et Jjr. Baumvol, The study of thermal nitridation and reoxidation mechanisms using isotopictracing methods, INSTABILITIES IN SILICON DEVICES, VOL 3, 1999, pp. 495-520
Risultati: 1-12 |