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Results: 1-18 |
Results: 18
Nonlinear photogalvanic effect induced by monopolar spin orientation of holes in QWs
Authors: Ganichev, SD Danilov, SN Bel'kov, VV Ivchenko, EL Ketterl, H Vorobjev, LE Bichler, M Wegscheider, W Prettl, W
Citation: Sd. Ganichev et al., Nonlinear photogalvanic effect induced by monopolar spin orientation of holes in QWs, PHYSICA E, 10(1-3), 2001, pp. 52-56
Characterization of deep impurities in semiconductors by terahertz tunneling ionization
Authors: Ganichev, SD Ziemann, E Yassievich, IN Perel, VI Prettl, W
Citation: Sd. Ganichev et al., Characterization of deep impurities in semiconductors by terahertz tunneling ionization, MAT SC S PR, 4(1-3), 2001, pp. 281-284
Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities - art. no. 201204
Authors: Ganichev, SD Ketterl, H Prettl, W Merkulov, IA Perel, VI Yassievich, IN Malyshev, AV
Citation: Sd. Ganichev et al., Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities - art. no. 201204, PHYS REV B, 6320(20), 2001, pp. 1204
Conversion of spin into directed electric current in quantum wells
Authors: Ganichev, SD Ivchenko, EL Danilov, SN Eroms, J Wegscheider, W Weiss, D Prettl, W
Citation: Sd. Ganichev et al., Conversion of spin into directed electric current in quantum wells, PHYS REV L, 86(19), 2001, pp. 4358-4361
Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors
Authors: Ganichev, SD Ziemann, E Prettl, W Yassievich, IN Istratov, AA Weber, ER
Citation: Sd. Ganichev et al., Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors, PHYS REV B, 61(15), 2000, pp. 10361-10365
Near-field induced FIR Josephson-detection by c-axis-oriented YBa2Cu3O7-delta-films
Authors: Zepezauer, E Kalbeck, A Ganichev, SD Korzenietz, W Prettl, W
Citation: E. Zepezauer et al., Near-field induced FIR Josephson-detection by c-axis-oriented YBa2Cu3O7-delta-films, INT J INFRA, 21(3), 2000, pp. 355-363
Visible light emission due to resonant CO2 laser excitation of dental hardtissue
Authors: Lohner, A Huber, M Ganichev, SD Prettl, W Niederdellmann, H
Citation: A. Lohner et al., Visible light emission due to resonant CO2 laser excitation of dental hardtissue, INT J INFRA, 21(3), 2000, pp. 407-419
Microwave-induced patterns in n-GaAs and their photoluminescence imaging
Authors: Bel'kov, VV Hirschinger, J Schowalter, D Niedernostheide, FJ Ganichev, SD Prettl, W Mac Mathuna, D Novak, V
Citation: Vv. Bel'Kov et al., Microwave-induced patterns in n-GaAs and their photoluminescence imaging, PHYS REV B, 61(20), 2000, pp. 13698-13702
Characterization of deep impurities in semiconductors by terahertz tunneling ionization
Authors: Ziemann, E Ganichev, SD Prettl, W Yassievich, IN Perel, VI
Citation: E. Ziemann et al., Characterization of deep impurities in semiconductors by terahertz tunneling ionization, J APPL PHYS, 87(8), 2000, pp. 3843-3849
Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs multiple-quantum wells
Authors: Ganichev, SD Ketterl, H Prettl, W Ivchenko, EL Vorobjev, LE
Citation: Sd. Ganichev et al., Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs multiple-quantum wells, APPL PHYS L, 77(20), 2000, pp. 3146-3148
Tunnel ionization of deep impurities in semiconductors induced by terahertz electric fields
Authors: Ganichev, SD
Citation: Sd. Ganichev, Tunnel ionization of deep impurities in semiconductors induced by terahertz electric fields, PHYSICA B, 274, 1999, pp. 737-742
Terahertz tunnel ionization of DX-centers in AlGaAs : Te
Authors: Ketterl, H Ziemann, E Ganichev, SD Yassievich, IN Belyaev, A Schmult, S Prettl, W
Citation: H. Ketterl et al., Terahertz tunnel ionization of DX-centers in AlGaAs : Te, PHYSICA B, 274, 1999, pp. 766-769
Magnetic field effect on tunnel ionization of deep impurities by far-infrared radiation
Authors: Moskalenko, AS Ganichev, SD Perel, VI Yassievich, IN
Citation: As. Moskalenko et al., Magnetic field effect on tunnel ionization of deep impurities by far-infrared radiation, PHYSICA B, 274, 1999, pp. 1007-1010
Effect of electron heating and radiation pressure on tunneling across Schottky barrier due to giant near field of FIR laser radiation
Authors: Shul'man, AY Ganichev, SD Dizhur, EM Kotel'nikov, IN Zepezauer, E Prettl, W
Citation: Ay. Shul'Man et al., Effect of electron heating and radiation pressure on tunneling across Schottky barrier due to giant near field of FIR laser radiation, PHYSICA B, 272(1-4), 1999, pp. 442-447
Spin-dependent terahertz nonlinearities at inter-valence-band absorption in p-Ge
Authors: Ganichev, SD Ketterl, H Beregulin, EV Prettl, W
Citation: Sd. Ganichev et al., Spin-dependent terahertz nonlinearities at inter-valence-band absorption in p-Ge, PHYSICA B, 272(1-4), 1999, pp. 464-466
Excitation of deep defects by intense terahertz radiation
Authors: Ganichev, SD
Citation: Sd. Ganichev, Excitation of deep defects by intense terahertz radiation, ACT PHY P A, 96(5), 1999, pp. 535-544
Near-zone field effect of FIR laser radiation on tunnel current through the Schottky barrier under plasma reflection condition
Authors: Shulman, AY Ganichev, SD Kotelnikov, IN Dizhur, EM Prettl, W Ormont, AB Fedorov, YV Zepezauer, E
Citation: Ay. Shulman et al., Near-zone field effect of FIR laser radiation on tunnel current through the Schottky barrier under plasma reflection condition, PHYS ST S-A, 175(1), 1999, pp. 289-296
Pattern formation in semiconductors
Authors: Bel'kov, VV Hirschinger, J Novak, V Niedernostheide, FJ Ganichev, SD Prettl, W
Citation: Vv. Bel'Kov et al., Pattern formation in semiconductors, NATURE, 397(6718), 1999, pp. 398-398
Risultati: 1-18 |