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Results:
1-4
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Results: 4
Authors:
Gao, PT
Meng, LJ
dos Santos, MP
Teixeira, V
Andritschky, M
Citation: Pt. Gao et al., Influence of sputtering pressure on the structure and properties of ZrO2 films prepared by rf reactive sputtering, APPL SURF S, 173(1-2), 2001, pp. 84-90
Authors:
Gao, PT
Meng, LJ
dos Santos, MP
Teixeira, V
Andritschky, M
Citation: Pt. Gao et al., Characterisation of ZrO2 films prepared by rf reactive sputtering at different O-2 concentrations in the sputtering gases, VACUUM, 56(2), 2000, pp. 143-148
Authors:
Gao, PT
Meng, LJ
dos Santos, MP
Teixeira, V
Andritschky, M
Citation: Pt. Gao et al., Study of ZrO2-Y2O3 films prepared by rf magnetron reactive sputtering, THIN SOL FI, 377, 2000, pp. 32-36
Authors:
Gao, PT
Meng, LJ
dos Santos, MP
Teixeira, V
Andritschky, M
Citation: Pt. Gao et al., Influence of sputtering power and the substrate-target distance on the properties of ZrO2 films prepared by RF reactive sputtering, THIN SOL FI, 377, 2000, pp. 557-561
Risultati:
1-4
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