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Citation: Wr. Mckinnon et al., Emitter interface in InP-based HBTs with InAlAs/InP composite emitters, IEICE TR EL, E84C(10), 2001, pp. 1373-1378

Authors: Driad, R McKinnon, WR McAlister, SP Garanzotis, T SpringThorpe, AJ

Citation: R. Driad et al., Effect of emitter design on the dc characteristics of InP-based double-heterojunction bipolar transistors, SEMIC SCI T, 16(3), 2001, pp. 171-175

Authors: Springthorpe, AJ Garanzotis, T Paddon, P Pakulski, G White, KI

Citation: Aj. Springthorpe et al., Strained 1.3 mu m MQW AlGaInAs lasers grown by digital alloy MBE, ELECTR LETT, 36(12), 2000, pp. 1031-1032