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Results:
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Results: 15
Authors:
Zheng, HQ
Yoon, SF
Gay, BP
Mah, KW
Radhakrishnan, K
Ng, GI
Citation: Hq. Zheng et al., Optimization of InxGa1-xP/In0.2Ga0.8As/GaAs high electron mobility transistor structures grown by solid source molecular beam epitaxy, MAT SCI E B, 75(2-3), 2000, pp. 110-114
Authors:
Yoon, SF
Gay, BP
Zheng, HQ
Kam, AHT
Citation: Sf. Yoon et al., Molecular beam epitaxial growth of high performance In0.48Ga0.52P/In0.20Ga0.80As/GaAs p-HEMTs using a valved phosphorus cracker cell, MAT SCI E B, 74(1-3), 2000, pp. 151-157
Authors:
Yoon, SF
Kam, AHT
Gay, BP
Zheng, HQ
Citation: Sf. Yoon et al., A simulation study on pseudomorphic high electron mobility transistors (pHEMT) fabricated using the GaInP/InGaAs material system, SOL ST ELEC, 44(7), 2000, pp. 1267-1274
Authors:
Yoon, SF
Kam, AHT
Gay, BP
Zheng, HQ
Citation: Sf. Yoon et al., A simulation study on the DC characteristics of the Ga0.52In0.48P/In0.2Ga0.8As/Ca0.52In0.48P double heterojunction pseudomorphic high electron mobility transistor, SOL ST ELEC, 44(6), 2000, pp. 1035-1042
Authors:
Yoon, SF
Yip, KH
Zheng, HQ
Gay, BP
Citation: Sf. Yoon et al., Deep level effects on the characteristics of Al0.24Ga0.76As/In0.20Ga0.80As/GaAs and In0.48Ga0.52P/In0.20Ga0.80As/GaAs high electron mobility transistors grown by solid source molecular beam epitaxy, SOL ST ELEC, 44(11), 2000, pp. 1909-1916
Authors:
Yoon, SF
Kam, AHT
Zheng, HQ
Gay, BP
Citation: Sf. Yoon et al., A simulation study on the effect of channel thickness on the characteristics of Ga0.52In0.48P/In0.2Ga0.8As/Ga0.52In0.48P DH-pHEMT, MICROELEC J, 31(8), 2000, pp. 667-676
Authors:
Yoon, SF
Mah, KW
Zheng, HQ
Gay, BP
Zhang, PH
Citation: Sf. Yoon et al., Observation of weak ordering effects and surface morphology study of InGaPgrown by solid source molecular beam epitaxy, MICROELEC J, 31(1), 2000, pp. 15-21
Authors:
Yoon, SF
Yip, KH
Zheng, HQ
Gay, BP
Citation: Sf. Yoon et al., Effect of deep levels on the characteristics of InGa1-xP/In0.20Ca0.80As/GaAs high-electron mobility transistor grown by solid-source MBE, J CRYST GR, 217(1-2), 2000, pp. 33-39
Authors:
Zheng, HQ
Yoon, SF
Gay, BP
Mah, KW
Radhakrishnan, K
Ng, GI
Citation: Hq. Zheng et al., Growth optimization of InGaP layers by solid source molecular beam epitaxyfor the application of InGaP/In0.2Ga As-0.8/GaAs high electron mobility transistor structures, J CRYST GR, 216(1-4), 2000, pp. 51-56
Authors:
Yoon, SF
Gay, BP
Zheng, HQ
Citation: Sf. Yoon et al., In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistors grown by solid-source molecular-beam epitaxy using a valved phosphorus cracker cell, INT J ELECT, 87(3), 2000, pp. 257-267
Authors:
Yoon, SF
Gay, BP
Zheng, HQ
Kam, HT
Degenhardt, J
Citation: Sf. Yoon et al., Fabrication of strained and double heterojunction InxGa1-xP/In0.2Ga0.8As high electron mobility transistors grown by solid-source molecular beam epitaxy, IEEE DEVICE, 47(5), 2000, pp. 1115-1117
Authors:
Yoon, SF
Gay, BP
Zheng, HQ
Ang, KS
Wang, H
Ng, GI
Citation: Sf. Yoon et al., 0.25-mu m gate In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistors grown by solid-source molecular beam epitaxy, SOL ST ELEC, 43(4), 1999, pp. 785-789
Authors:
Yoon, SF
Gay, BP
Zheng, HQ
Kam, HT
Degenhardt, J
Citation: Sf. Yoon et al., Fabrication and characterisation of double heterojunction In0.48Ga0.52P/In0.20Ca0.80As high electron mobility transistors grown by solid-source molecular beam epitaxy, SOL ST ELEC, 43(11), 1999, pp. 2097-2101
Authors:
Yoon, SF
Kam, AHT
Gay, BP
Zheng, HQ
Ng, GI
Citation: Sf. Yoon et al., Study of In0.48Ga0.52P/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor using a two-dimensional device simulator, MICROELEC J, 30(8), 1999, pp. 745-752
Authors:
Yoon, SF
Gay, BP
Zheng, HQ
Ang, KS
Wang, H
Ng, GI
Citation: Sf. Yoon et al., Fabrication and characteristics of In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor grown by solid-source molecular beam epitaxy, MICROELEC J, 30(1), 1999, pp. 23-28
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