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Results: 1-11 |
Results: 11
GaAs(2511): A new stable surface within the stereographic triangle
Authors: Geelhaar, L Marquez, J Kratzer, P Jacobi, K
Citation: L. Geelhaar et al., GaAs(2511): A new stable surface within the stereographic triangle, PHYS REV L, 86(17), 2001, pp. 3815-3818
Atomic structure of the stoichiometric GaAs(114) surface
Authors: Marquez, J Kratzer, P Geelhaar, L Jacobi, K Scheffler, M
Citation: J. Marquez et al., Atomic structure of the stoichiometric GaAs(114) surface, PHYS REV L, 86(1), 2001, pp. 115-118
Atomically resolved structure of InAs quantum dots
Authors: Marquez, J Geelhaar, L Jacobi, K
Citation: J. Marquez et al., Atomically resolved structure of InAs quantum dots, APPL PHYS L, 78(16), 2001, pp. 2309-2311
The morphology of high-index GaAs surfaces
Authors: Jacobi, K Geelhaar, L Marquez, J Platen, J Setzer, C
Citation: K. Jacobi et al., The morphology of high-index GaAs surfaces, APPL SURF S, 166(1-4), 2000, pp. 173-178
Atomic structure of the GaAs((311)over-bar)B(8X1) surface reconstruction
Authors: Marquez, J Geelhaar, L Jacobi, K
Citation: J. Marquez et al., Atomic structure of the GaAs((311)over-bar)B(8X1) surface reconstruction, PHYS REV B, 62(15), 2000, pp. 9969-9972
Experimental evidence for a stable GaAs surface near (113)
Authors: Geelhaar, L Marquez, J Jacobi, K
Citation: L. Geelhaar et al., Experimental evidence for a stable GaAs surface near (113), PHYS REV B, 62(11), 2000, pp. 6908-6911
A compact ultrahigh-vacuum system for the in situ investigation of III/V semiconductor surfaces
Authors: Geng, P Marquez, J Geelhaar, L Platen, J Setzer, C Jacobi, K
Citation: P. Geng et al., A compact ultrahigh-vacuum system for the in situ investigation of III/V semiconductor surfaces, REV SCI INS, 71(2), 2000, pp. 504-508
Step structure on GaAs(113)A studied by scanning tunneling microscopy
Authors: Geelhaar, L Marquez, J Jacobi, K
Citation: L. Geelhaar et al., Step structure on GaAs(113)A studied by scanning tunneling microscopy, PHYS REV B, 60(23), 1999, pp. 15890-15895
Morphology, surface core-level shifts and surface energy of the faceted GaAs(112)A and(112)B surfaces
Authors: Jacobi, K Platen, J Setzer, C Marquez, J Geelhaar, L Meyne, C Richter, W Kley, A Ruggerone, P Scheffler, M
Citation: K. Jacobi et al., Morphology, surface core-level shifts and surface energy of the faceted GaAs(112)A and(112)B surfaces, SURF SCI, 439(1-3), 1999, pp. 59-72
Ion beam mass spectrometer for compositional analysis of plasma assisted surface processes in the pressure range of 1-50 mbar
Authors: Katai, S Tass, Z Bori, L Hars, G Deak, P Geelhaar, L
Citation: S. Katai et al., Ion beam mass spectrometer for compositional analysis of plasma assisted surface processes in the pressure range of 1-50 mbar, REV SCI INS, 70(8), 1999, pp. 3324-3328
A scanning tunneling microscopy study of the GaAs(112) surfaces
Authors: Geelhaar, L Marquez, J Jacobi, K Kley, A Ruggerone, P Scheffler, M
Citation: L. Geelhaar et al., A scanning tunneling microscopy study of the GaAs(112) surfaces, MICROELEC J, 30(4-5), 1999, pp. 393-396
Risultati: 1-11 |