Authors: Hefyene, N Cristoloveanu, S Ghibaudo, G Gentil, P Moriyasu, Y Morishita, T Matsui, M Yasujima, A

Citation: N. Hefyene et al., Adaptation of the pseudo-MOS transistor for the characterization of silicon-on-sapphire films, SOL ST ELEC, 44(10), 2000, pp. 1711-1715

Authors: Bouillon, P Gwoziecki, R Skotnicki, T Alieu, J Gentil, P

Citation: P. Bouillon et al., Universal impurity ionization parameters in MIS C-V freeze-out characteristics and direct extraction of surface doping concentration, IEEE DEVICE, 47(4), 2000, pp. 871-877

Authors: Gwoziecki, R Skotnicki, T Bouillon, P Gentil, P

Citation: R. Gwoziecki et al., Optimization of V-th roll-off in MOSFET's with advanced channel architecture - Retrograde doping and pockets, IEEE DEVICE, 46(7), 1999, pp. 1551-1561

Authors: Gentil, P

Citation: P. Gentil, Multilayer dielectrics for memory applications, INSTABILITIES IN SILICON DEVICES, VOL 3, 1999, pp. 341-404