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Results:
1-19
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Results: 19
Authors:
Georgakilas, A
Czigany, Z
Amimer, K
Davydov, VY
Toth, L
Pecz, B
Citation: A. Georgakilas et al., MBE growth of different hexagonal GaN crystal structures on vicinal (100) GaAs substrates, MAT SCI E B, 82(1-3), 2001, pp. 16-18
Authors:
Aperathitis, E
Cengher, D
Kayambaki, M
Androulidaki, M
Deligeorgis, G
Tsagaraki, K
Hatzopoulous, Z
Georgakilas, A
Citation: E. Aperathitis et al., Evaluation of reactive ion etching processes for fabrication of integratedGaAs/AlGaAs optoelectronic devices, MAT SCI E B, 80(1-3), 2001, pp. 77-80
Authors:
Cengher, D
Aperathitis, E
Androulidaki, M
Deligeorgis, G
Kayambaki, M
Hatzopoulos, Z
Tzanetakis, P
Georgakilas, A
Citation: D. Cengher et al., Evaluation of performance capabilities of emitters and detectors based on a common MQW structure, MAT SCI E B, 80(1-3), 2001, pp. 241-244
Authors:
Amimer, K
Georgakilas, A
Androulidaki, M
Tsagaraki, K
Pavelescu, M
Mikroulis, S
Constantinidis, G
Arbiol, J
Peiro, F
Cornet, A
Calamiotou, M
Kuzmik, J
Davydov, VY
Citation: K. Amimer et al., Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy, MAT SCI E B, 80(1-3), 2001, pp. 304-308
Authors:
Kyriakis-Bitzaros, ED
Haralabidis, N
Lagadas, M
Georgakilas, A
Moisiadis, Y
Halkias, G
Citation: Ed. Kyriakis-bitzaros et al., Realistic end-to-end simulation of the optoelectronic links and comparisonwith the electrical interconnections for system-on-chip applications, J LIGHTW T, 19(10), 2001, pp. 1532-1542
Authors:
Bak-Misiuk, J
Dynowska, E
Misiuk, A
Calamiotou, M
Kozanecki, A
Domagala, J
Kuristyn, D
Glukhanyuk, W
Georgakilas, A
Trela, J
Adamczewska, J
Citation: J. Bak-misiuk et al., Effect of high temperature-pressure on GaAs layers grown on vicinal Si substrates, CRYST RES T, 36(8-10), 2001, pp. 997-1003
Authors:
Kyriakis-Bitzaros, ED
Haralabidis, N
Moisiadis, Y
Lagadas, M
Georgakilas, A
Halkias, G
Citation: Ed. Kyriakis-bitzaros et al., Comparison of the signal latency in optical and electrical interconnections for interchip links, OPT ENG, 40(1), 2001, pp. 144-146
Authors:
Calamiotou, M
Chrysanthakopoulos, N
Lioutas, C
Tsagaraki, K
Georgakilas, A
Citation: M. Calamiotou et al., Microstructural differences of the two possible orientations of GaAs on vicinal (001) Si substrates, J CRYST GR, 227, 2001, pp. 98-103
Authors:
Hatzopoulos, Z
Cengher, D
Deligeorgis, G
Androulidaki, M
Aperathitis, E
Halkias, G
Georgakilas, A
Citation: Z. Hatzopoulos et al., Molecular beam epitaxy of GaAs/AlGaAs epitaxial structures for integrated optoelectronic devices on Si using GaAs-Si wafer bonding, J CRYST GR, 227, 2001, pp. 193-196
Authors:
Georgakilas, A
Amimer, K
Tzanetakis, P
Hatzopoulos, Z
Cengher, M
Pecz, B
Czigany, Z
Toth, L
Baidakova, MV
Sakharov, AV
Davydov, VY
Citation: A. Georgakilas et al., Correlation of the structural and optical properties of GaN grown on vicinal (001) GaAs substrates with the plasma-assisted MBE growth conditions, J CRYST GR, 227, 2001, pp. 410-414
Authors:
Georgakilas, A
Tsagaraki, K
Makarona, E
Constantinidis, G
Adroulidaki, M
Kayambaki, M
Aperathitis, E
Pelekanos, NT
Citation: A. Georgakilas et al., Direct MBE growth of GaN on GaAs substrates for integrated short wavelength emitters, MAT SC S PR, 3(5-6), 2000, pp. 511-515
Authors:
Amimer, K
Georgakilas, A
Tsagaraki, K
Androulidaki, M
Cengher, D
Toth, L
Pecz, B
Calamiotou, M
Citation: K. Amimer et al., Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy, APPL PHYS L, 76(18), 2000, pp. 2580-2582
Authors:
Arbiol, J
Peiro, F
Cornet, A
Michelakis, K
Georgakilas, A
Citation: J. Arbiol et al., Temperature-graded InAlAs buffers applied on InGaAs/InAlAs/InP high electron mobility transistor heterostructures, J VAC SCI B, 17(6), 1999, pp. 2540-2544
Comparison of InGaAs/InAlAs electroabsorption modulator structures on (100) and (111) InP substrates
Authors:
Michelakis, C
Georgakilas, A
Androulidaki, M
Harteros, K
Deligeorgis, G
Calamiotou, M
Peiro, F
Becourt, N
Cornet, A
Halkias, G
Citation: C. Michelakis et al., Comparison of InGaAs/InAlAs electroabsorption modulator structures on (100) and (111) InP substrates, MAT SCI E B, 66(1-3), 1999, pp. 181-184
Authors:
Arbiol, J
Peiro, F
Cornet, A
Morante, JR
Michelakis, K
Georgakilas, A
Citation: J. Arbiol et al., Comparison of homogeneously grown and temperature-graded InAlAs buffers inthe range 400-560 degrees C: effects on surface morphology and layer stability, THIN SOL FI, 357(1), 1999, pp. 61-65
Influence of MBE growth temperature on the properties of cubic GaN grown directly on GaAs substrates
Authors:
Georgakilas, A
Androulidaki, M
Tsagraki, K
Amimer, K
Constantinidis, G
Pelekanos, NT
Calamiotou, M
Czigany, Z
Pecz, B
Citation: A. Georgakilas et al., Influence of MBE growth temperature on the properties of cubic GaN grown directly on GaAs substrates, PHYS ST S-A, 176(1), 1999, pp. 525-528
Authors:
Georgakilas, A
Michelakis, K
Kayambaki, M
Tsagaraki, K
Macarona, E
Hatzopoulos, Z
Vila, A
Becourt, N
Peiro, F
Cornet, A
Chrysanthakopoulos, N
Calamiotou, M
Citation: A. Georgakilas et al., Material properties of InAlAs layers grown by MBE on vicinal (111)B InP substrates, J CRYST GR, 202, 1999, pp. 248-251
Authors:
Lioutas, CB
Delimitisi, A
Georgakilas, A
Citation: Cb. Lioutas et al., TEM investigation of the dependence of structural defects on prelayer formation in GaAs-on-Si thin films, THIN SOL FI, 336(1-2), 1998, pp. 96-99
Authors:
Georgakilas, A
Tsagaraki, K
Harteros, K
Hatzopoulos, Z
Vila, A
Becourt, N
Peiro, F
Cornet, A
Chrysanthakopoulos, N
Calamiotou, M
Citation: A. Georgakilas et al., Correlation between the sign of strain and the surface morphology and defect structure of InAlAs grown on vicinal (111)BInP, THIN SOL FI, 336(1-2), 1998, pp. 218-221
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