Authors:
Borghesi, A
Sassella, A
Geranzani, P
Porrini, M
Pivac, B
Citation: A. Borghesi et al., Infrared characterization of oxygen precipitates in silicon wafers with different concentrations of interstitial oxygen, MAT SCI E B, 73(1-3), 2000, pp. 145-148
Authors:
Sassella, A
Borghesi, A
Borionetti, G
Geranzani, P
Citation: A. Sassella et al., Optical absorption of precipitated oxygen in silicon at liquid helium temperature, MAT SCI E B, 73(1-3), 2000, pp. 224-229
Authors:
Geranzani, P
Porrini, M
Orizio, R
Falster, R
Citation: P. Geranzani et al., Minority carrier lifetime dependence on resistivity in high-purity p-type silicon, J ELCHEM SO, 146(9), 1999, pp. 3494-3499
Authors:
Sassella, A
Borghesi, A
Geranzani, P
Borionetti, G
Citation: A. Sassella et al., Infrared response of oxygen precipitates in silicon: Experimental and simulated spectra, APPL PHYS L, 75(8), 1999, pp. 1131-1133