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Results:
1-4
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Results: 4
Electrical characteristics of 4.5 kV implanted anode 4H-SiC P-I-N junctionrectifiers
Authors:
Fedison, JB Ramungul, N Chow, TP Ghezzo, M Kretchmer, JW
Citation:
Jb. Fedison et al., Electrical characteristics of 4.5 kV implanted anode 4H-SiC P-I-N junctionrectifiers, IEEE ELEC D, 22(3), 2001, pp. 130-132
Switching characteristics of silicon carbide power PiN diodes
Authors:
Elasser, A Ghezzo, M Krishnamurthy, N Kretchmer, J Clock, AW Brown, DM Chow, TP
Citation:
A. Elasser et al., Switching characteristics of silicon carbide power PiN diodes, SOL ST ELEC, 44(2), 2000, pp. 317-323
Characterization of phosphorus implantation in 4H-SiC
Authors:
Khemka, V Patel, R Ramungul, N Chow, TP Ghezzo, M Kretchmer, J
Citation:
V. Khemka et al., Characterization of phosphorus implantation in 4H-SiC, J ELEC MAT, 28(3), 1999, pp. 167-174
Donor ion-implantation doping into SiC
Authors:
Rao, MV Tucker, J Holland, OW Papanicolaou, N Chi, PH Kretchmer, JW Ghezzo, M
Citation:
Mv. Rao et al., Donor ion-implantation doping into SiC, J ELEC MAT, 28(3), 1999, pp. 334-340
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