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Results:
1-13
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Results: 13
Authors:
King, JP
Chapman, JN
Gillies, MF
Kools, JCS
Citation: Jp. King et al., Magnetization reversal of NiFe films exchange-biased by IrMn and FeMn, J PHYS D, 34(4), 2001, pp. 528-538
Authors:
Kirk, KJ
Scheinfein, MR
Chapman, JN
McVitie, S
Gillies, MF
Ward, BR
Tennant, JG
Citation: Kj. Kirk et al., Role of vortices in magnetization reversal of rectangular NiFe elements, J PHYS D, 34(2), 2001, pp. 160-166
Authors:
Kottler, V
Gillies, MF
Kuiper, AET
Citation: V. Kottler et al., An in situ x-ray photoelectron spectroscopy study of AlOx spin tunnel barrier formation, J APPL PHYS, 89(6), 2001, pp. 3301-3306
Authors:
Kuiper, AET
Gillies, MF
Kottler, V
't Hooft, GW
van Berkum, JGM
van der Marel, C
Tamminga, Y
Snijders, JHM
Citation: Aet. Kuiper et al., Plasma oxidation of thin aluminum layers for magnetic spin-tunnel junctions, J APPL PHYS, 89(3), 2001, pp. 1965-1972
Authors:
Oepts, W
Gillies, MF
Coehoorn, R
van de Veerdonk, RJM
de Jonge, WJM
Citation: W. Oepts et al., Asymmetric bias voltage dependence of the magnetoresistance of Co/Al2O3/Comagnetic tunnel junctions: Variation with the barrier oxidation time, J APPL PHYS, 89(12), 2001, pp. 8038-8045
Authors:
Gillies, MF
Kuiper, AET
Leibbrandt, GWR
Citation: Mf. Gillies et al., Effect of thin oxide layers incorporated in spin valve structures, J APPL PHYS, 89(11), 2001, pp. 6922-6924
Authors:
Gillies, MF
Kuiper, AET
van Zon, JBA
Sturm, JM
Citation: Mf. Gillies et al., Magnetic tunnel junctions with tantalum oxide barriers displaying a magnetoresistance ratio of up to 10% at room temperature, APPL PHYS L, 78(22), 2001, pp. 3496-3498
Authors:
Ardhuin, H
Chapman, JN
Aitchison, PR
Gillies, MF
Kirk, KJ
Wilkinson, CDW
Citation: H. Ardhuin et al., Magnetization reversal of patterned spin-tunnel junction material: A transmission electron microscopy study, J APPL PHYS, 88(5), 2000, pp. 2760-2765
Authors:
Gillies, MF
Kuiper, AET
Citation: Mf. Gillies et Aet. Kuiper, Enhancement of the giant magnetoresistance in spin valves via oxides formed from magnetic layers, J APPL PHYS, 88(10), 2000, pp. 5894-5898
Authors:
Gillies, MF
Kuiper, AET
Coehoorn, R
Donkers, JJTM
Citation: Mf. Gillies et al., Compositional, structural, and electrical characterization of plasma oxidized thin aluminum layers for spin-tunnel junctions, J APPL PHYS, 88(1), 2000, pp. 429-434
Authors:
King, JP
Chapman, JN
Kools, JCS
Gillies, MF
Citation: Jp. King et al., On the free layer reversal mechanism of FeMn-biased spin-valves with parallel anisotropy, J PHYS D, 32(10), 1999, pp. 1087-1096
Authors:
Gillies, MF
Oepts, W
Kuiper, AET
Coehoorn, R
Tamminga, Y
Snijders, JHM
Bik, WMA
Citation: Mf. Gillies et al., The optimum oxidation state of AlOx magnetic tunnel junctions, IEEE MAGNET, 35(5), 1999, pp. 2991-2993
Authors:
Gillies, MF
Coehoorn, R
van Zon, JBA
Alders, D
Citation: Mf. Gillies et al., Structure and soft magnetic properties of sputter deposited MnZn-ferrite films, J APPL PHYS, 83(11), 1998, pp. 6855-6857
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