Authors: Zdansky, K Zavadil, J Prochazkova, O Gladkov, P

Citation: K. Zdansky et al., P-type InP grows by liquid phase epitaxy with rare earths: not intentionalGe acceptor doping, MAT SCI E B, 80(1-3), 2001, pp. 10-13

Authors: Nohavica, D Gladkov, P Zd'ansky, K

Citation: D. Nohavica et al., Preparation and properties of thick not intentionally doped GaInP(As)/GaAslayers, NUCL INST A, 434(1), 1999, pp. 164-168

Authors: Nohavica, D Gladkov, P Zdansky, K

Citation: D. Nohavica et al., Preparation and properties of thick not intentionally doped GaInP(As)/GaAslayers for optoelectronic applications, CZEC J PHYS, 49(5), 1999, pp. 797-804

Authors: Gladkov, P Weber, J

Citation: P. Gladkov et J. Weber, Low temperature photoluminescence properties of p- and n-type AlxGa1-xAs with x > 0.42, CZEC J PHYS, 49(5), 1999, pp. 823-832