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Results:
1-7
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Results: 7
Authors:
Tudury, HAP
Nakaema, MKK
Iikawa, R
Brum, JA
Ribeiro, E
Carvalho, W
Bernussi, AA
Gobbi, AL
Citation: Hap. Tudury et al., Strain-dependent optical emission in In1-xGaxAs/InP quantum wells - art. no. 153301, PHYS REV B, 6415(15), 2001, pp. 3301
Authors:
de Carvalho, W
Furtado, MT
Bernussi, AA
Gobbi, AL
Cotta, MA
Citation: W. De Carvalho et al., Impact of growth rate on the quality of ZNS-MQW InGaAsP/InP laser structures grown by LP-MOVPE, J ELEC MAT, 29(1), 2000, pp. 62-68
Authors:
Gutierrez, HR
Cotta, MA
Bortoleto, JRR
Ugarte, D
Pudenzi, MAA
Gobbi, AL
de Carvalho, MMG
Citation: Hr. Gutierrez et al., Surface size effect on the growth mode and morphology of InP epitaxial films, PHYS REV B, 62(23), 2000, pp. 15409-15412
Authors:
Bernussi, AA
Carvalho, W
Furtado, MT
Gobbi, AL
Citation: Aa. Bernussi et al., Strain and relaxation processes in In1-xGaxAsyP1-y/InP single quantum wells grown by LP-MOVPE, BRAZ J PHYS, 29(4), 1999, pp. 746-750
Authors:
Gutierrez, HR
Cotta, MA
Nakaema, WM
de Carvalho, MMG
Gobbi, AL
Citation: Hr. Gutierrez et al., Size effects on the growth mode and roughness of sub-micron structures grown by selective area epitaxy, BRAZ J PHYS, 29(4), 1999, pp. 764-767
Authors:
de Carvalho, W
Bernussi, AA
Furtado, MT
Gobbi, AL
Cotta, M
Citation: W. De Carvalho et al., Morphological, optical and structural properties of zero-net-strained InGaAsP/InP structures grown by LP-MOVPE for 1.55 mu m laser applications, BRAZ J PHYS, 29(4), 1999, pp. 839-842
Authors:
Bernussi, AA
Carvalho, W
Furtado, MT
Gobbi, AL
Citation: Aa. Bernussi et al., Photoluminescence microscopy imaging of tensile strained In1-xGaxAsyP1-y/InP quantum wells grown by low-pressure metalorganic vapor phase epitaxy, J APPL PHYS, 86(1), 1999, pp. 402-407
Risultati:
1-7
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