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Results: 1-13 |
Results: 13
Kinetic modeling of relaxation phenomena after photodetachment in a rf electronegative SiH4 discharge - art. no. 026405
Authors: Yan, M Bogaerts, A Gijbels, R Goedheer, WJ
Citation: M. Yan et al., Kinetic modeling of relaxation phenomena after photodetachment in a rf electronegative SiH4 discharge - art. no. 026405, PHYS REV E, 6302(2), 2001, pp. 6405
Simulations of geometrically pinched argon plasmas using an extended one-dimensional model
Authors: Burm, KTAL Goedheer, WJ Schram, DC
Citation: Ktal. Burm et al., Simulations of geometrically pinched argon plasmas using an extended one-dimensional model, J PHYS D, 34(13), 2001, pp. 2000-2015
Plasma expansion in the preshock region
Authors: Burm, KTAL Goedheer, WJ Schram, DC
Citation: Ktal. Burm et al., Plasma expansion in the preshock region, J APPL PHYS, 90(5), 2001, pp. 2162-2168
Lecture notes on radio-frequency discharges, dc potentials, ion and electron energy distributions
Authors: Goedheer, WJ
Citation: Wj. Goedheer, Lecture notes on radio-frequency discharges, dc potentials, ion and electron energy distributions, PLASMA SOUR, 9(4), 2000, pp. 507-516
Electron energy distribution function in capacitively coupled RF discharges: difference between electropositive Ar and electronegative SiH4 discharges
Authors: Yan, M Bogaerts, A Goedheer, WJ Gijbels, R
Citation: M. Yan et al., Electron energy distribution function in capacitively coupled RF discharges: difference between electropositive Ar and electronegative SiH4 discharges, PLASMA SOUR, 9(4), 2000, pp. 583-591
Spatial behavior of energy relaxation of electrons in capacitively coupleddischarges: Comparison between Ar and SiH4
Authors: Yan, M Bogaerts, A Gijbels, R Goedheer, WJ
Citation: M. Yan et al., Spatial behavior of energy relaxation of electrons in capacitively coupleddischarges: Comparison between Ar and SiH4, J APPL PHYS, 87(8), 2000, pp. 3628-3636
Deposition rate in modulated radio-frequency silane plasmas
Authors: Biebericher, ACW Bezemer, J van der Weg, WF Goedheer, WJ
Citation: Acw. Biebericher et al., Deposition rate in modulated radio-frequency silane plasmas, APPL PHYS L, 76(15), 2000, pp. 2002-2004
The isentropic exponent in plasmas
Authors: Burm, KTAL Goedheer, WJ Schram, DC
Citation: Ktal. Burm et al., The isentropic exponent in plasmas, PHYS PLASMA, 6(6), 1999, pp. 2622-2627
Mach numbers for gases and plasmas in a convergent-divergent cascaded arc
Authors: Burm, KTAL Goedheer, WJ Schram, DC
Citation: Ktal. Burm et al., Mach numbers for gases and plasmas in a convergent-divergent cascaded arc, PHYS PLASMA, 6(6), 1999, pp. 2628-2635
A PIC-MC simulation of the effect of frequency on the characteristics of VHFSiH4/H-2 discharges
Authors: Yan, M Goedheer, WJ
Citation: M. Yan et Wj. Goedheer, A PIC-MC simulation of the effect of frequency on the characteristics of VHFSiH4/H-2 discharges, PLASMA SOUR, 8(3), 1999, pp. 349-354
PLASIMO, a general model: I. Applied to an argon cascaded arc plasma
Authors: Janssen, GM van Dijk, J Benoy, DA Tas, MA Burm, KTAL Goedheer, WJ van der Mullen, JAM Schram, DC
Citation: Gm. Janssen et al., PLASIMO, a general model: I. Applied to an argon cascaded arc plasma, PLASMA SOUR, 8(1), 1999, pp. 1-14
Particle-in-cell/ Monte Carlo simulation of radio frequency SiH4/H-2 discharges
Authors: Yan, M Goedheer, WJ
Citation: M. Yan et Wj. Goedheer, Particle-in-cell/ Monte Carlo simulation of radio frequency SiH4/H-2 discharges, IEEE PLAS S, 27(5), 1999, pp. 1399-1405
A kinetic simulation of the effect of frequency on the power dissipation in VHF SiH4/H-2 discharges
Authors: Yan, M Goedheer, WJ
Citation: M. Yan et Wj. Goedheer, A kinetic simulation of the effect of frequency on the power dissipation in VHF SiH4/H-2 discharges, CZEC J PHYS, 48, 1998, pp. 257-262
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