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Results: 4

Authors: Zhang, SM Niu, GF Cressler, JD Mathew, SJ Gogineni, U Clark, SD Zampardi, P Pierson, RL
Citation: Sm. Zhang et al., A comparison of the effects of gamma irradiation on SiGeHBT and GaAsHBT technologies, IEEE NUCL S, 47(6), 2000, pp. 2521-2527

Authors: Gogineni, U Cressler, JD Niu, G Harame, DL
Citation: U. Gogineni et al., Hot electron and hot hole degradation of UHV/CVD SiGeHBT's, IEEE DEVICE, 47(7), 2000, pp. 1440-1448

Authors: Niu, GF Cressler, JD Gogineni, U Joseph, AJ
Citation: Gf. Niu et al., A new common-emitter hybrid-pi small-signal equivalent circuit for bipolartransistors with significant neutral base recombination, IEEE DEVICE, 46(6), 1999, pp. 1166-1173

Authors: Niu, GF Cressler, JD Zhang, SM Gogineni, U Ahlgren, DC
Citation: Gf. Niu et al., Measurement of collector-base junction avalanche multiplication effects inadvanced UHV/CVD SiGe HBT's, IEEE DEVICE, 46(5), 1999, pp. 1007-1015
Risultati: 1-4 |