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Results: 1-11 |
Results: 11
Hot-carrier reliability study of second and first impact ionization degradation in 0.15-mu m channel-length N-MOSFETS
Authors: Bravaix, A Goguenheim, D Revil, N Vincent, E
Citation: A. Bravaix et al., Hot-carrier reliability study of second and first impact ionization degradation in 0.15-mu m channel-length N-MOSFETS, MICROEL ENG, 59(1-4), 2001, pp. 101-108
Determination of the electrical properties of ultrathin silicon-based dielectric films: thermally grown SiNx
Authors: Pic, N Glachant, A Nitsche, S Hoarau, JY Goguenheim, D Vuillaume, D Sibai, A Chaneliere, C
Citation: N. Pic et al., Determination of the electrical properties of ultrathin silicon-based dielectric films: thermally grown SiNx, SOL ST ELEC, 45(8), 2001, pp. 1265-1270
Comparison of oxide leakage currents induced by ion implantation and high field electric stress
Authors: Goguenheim, D Bravaix, A Monserie, C Moragues, JM Lambert, P Boivin, P
Citation: D. Goguenheim et al., Comparison of oxide leakage currents induced by ion implantation and high field electric stress, SOL ST ELEC, 45(8), 2001, pp. 1355-1360
Injection mechanisms and lifetime prediction with the substrate voltage in0.15 mu m channel-length N-MOSFETs
Authors: Bravaix, A Goguenheim, D Revil, N Vincent, E
Citation: A. Bravaix et al., Injection mechanisms and lifetime prediction with the substrate voltage in0.15 mu m channel-length N-MOSFETs, MICROEL REL, 41(9-10), 2001, pp. 1313-1318
Determination of the electrical properties of 2.5 nm thick silicon-based dielectric films: thermally grown SiOx
Authors: Pic, N Glachant, A Nitsche, S Hoarau, JY Goguenheim, D Vuillaume, D Sibai, A Autran, JL
Citation: N. Pic et al., Determination of the electrical properties of 2.5 nm thick silicon-based dielectric films: thermally grown SiOx, J NON-CRYST, 280(1-3), 2001, pp. 69-77
Temperature and field dependence of stress induced leakage currents in very thin (< 5 nm) gate oxides
Authors: Goguenheim, D Bravaix, A Ananou, B Trapes, C Mondon, F Reimbold, G
Citation: D. Goguenheim et al., Temperature and field dependence of stress induced leakage currents in very thin (< 5 nm) gate oxides, J NON-CRYST, 280(1-3), 2001, pp. 78-85
Determination of the electrical properties of thermally grown ultrathin nitride films
Authors: Pic, N Glachant, A Nitsche, S Hoarau, JY Goguenheim, D Vuillaume, D Sibai, A Chaneliere, C
Citation: N. Pic et al., Determination of the electrical properties of thermally grown ultrathin nitride films, MICROEL REL, 40(4-5), 2000, pp. 589-592
Comparison of oxide leakage currents induced by ion implantation and high field electric stress
Authors: Goguenheim, D Bravaix, A Moragues, JM Lambert, P Boivin, P
Citation: D. Goguenheim et al., Comparison of oxide leakage currents induced by ion implantation and high field electric stress, MICROEL REL, 40(4-5), 2000, pp. 751-754
Turn-around effects during dynamic operation in 0.25 mu m CMOS technology from low to high temperature
Authors: Bravaix, A Goguenheim, D Revil, N Vincent, E
Citation: A. Bravaix et al., Turn-around effects during dynamic operation in 0.25 mu m CMOS technology from low to high temperature, MICROEL ENG, 48(1-4), 1999, pp. 163-166
Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides
Authors: Goguenheim, D Bravaix, A Vuillaume, D Mondon, F Candelier, P Jourdain, M Meinertzhagen, A
Citation: D. Goguenheim et al., Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides, MICROEL REL, 39(2), 1999, pp. 165-169
Analysis of high temperature effects on performances and hot-carrier degradation in DC/AC stressed 0.35 mu m n-MOSFETs
Authors: Bravaix, A Goguenheim, D Revil, N Vincent, E Varrot, M Mortini, P
Citation: A. Bravaix et al., Analysis of high temperature effects on performances and hot-carrier degradation in DC/AC stressed 0.35 mu m n-MOSFETs, MICROEL REL, 39(1), 1999, pp. 35-44
Risultati: 1-11 |