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Results: 1-10 |
Results: 10
Medium energy ion scattering for the characterisation of damage profiles of ultra shallow B implants in Si
Authors: van der Berg, JA Zhang, S Whelan, S Armour, DG Goldberg, RD Bailey, P Noakes, TCQ
Citation: Ja. Van Der Berg et al., Medium energy ion scattering for the characterisation of damage profiles of ultra shallow B implants in Si, NUCL INST B, 183(1-2), 2001, pp. 154-165
Implant temperature dependence of transient-enhanced diffusion in silicon (100) implanted with low-energy arsenic ions
Authors: Whelan, S Armour, DG Van den Berg, JA Goldberg, RD Zhang, S Bailey, P Noakes, TCQ
Citation: S. Whelan et al., Implant temperature dependence of transient-enhanced diffusion in silicon (100) implanted with low-energy arsenic ions, MAT SC S PR, 3(4), 2000, pp. 285-290
Cluster formation during annealing of ultra-low-energy boron-implanted silicon
Authors: Collart, EJH Murrell, AJ Foad, MA van den Berg, JA Zhang, S Armour, D Goldberg, RD Wang, TS Cullis, AG
Citation: Ejh. Collart et al., Cluster formation during annealing of ultra-low-energy boron-implanted silicon, J VAC SCI B, 18(1), 2000, pp. 435-439
The production and use of ultralow energy ion beams
Authors: Goldberg, RD Armour, DG van den Berg, JA Cook, CEA Whelan, S Zhang, S Knorr, N Foad, MA Ohno, H
Citation: Rd. Goldberg et al., The production and use of ultralow energy ion beams, REV SCI INS, 71(2), 2000, pp. 1032-1035
Enhanced degradation resistance of quantum dot lasers to radiation damage
Authors: Piva, PG Goldberg, RD Mitchell, IV Labrie, D Leon, R Charbonneau, S Wasilewski, ZR Fafard, S
Citation: Pg. Piva et al., Enhanced degradation resistance of quantum dot lasers to radiation damage, APPL PHYS L, 77(5), 2000, pp. 624-626
The dependence of arsenic transient enhanced diffusion on the silicon substrate temperature during ultralow energy implantation
Authors: Whelan, S Van den Berg, JA Zhang, S Armour, DG Goldberg, RD
Citation: S. Whelan et al., The dependence of arsenic transient enhanced diffusion on the silicon substrate temperature during ultralow energy implantation, APPL PHYS L, 76(5), 2000, pp. 571-573
Preferential amorphization at extended defects of self-ion-irradiated silicon
Authors: Goldberg, RD Williams, JS Elliman, RG
Citation: Rd. Goldberg et al., Preferential amorphization at extended defects of self-ion-irradiated silicon, PHYS REV L, 82(4), 1999, pp. 771-774
Assessment of the normalization procedure used for interlaboratory comparisons of positron beam measurements
Authors: Goldberg, RD Knights, AP Simpson, PJ Coleman, PG
Citation: Rd. Goldberg et al., Assessment of the normalization procedure used for interlaboratory comparisons of positron beam measurements, J APPL PHYS, 86(1), 1999, pp. 342-345
Experimental analysis and modeling of buried waveguides fabricated by quantum-well intermixing
Authors: Haysom, JE Delage, A He, JJ Koteles, ES Poole, PJ Feng, Y Goldberg, RD Mitchell, IV Charbonneau, S
Citation: Je. Haysom et al., Experimental analysis and modeling of buried waveguides fabricated by quantum-well intermixing, IEEE J Q EL, 35(9), 1999, pp. 1354-1363
Enhanced group-V intermixing in InGaAs InP quantum wells studied by cross-sectional scanning tunneling microscopy
Authors: Chen, HJ Feenstra, RM Piva, PG Goldberg, RD Mitchell, IV Aers, GC Poole, PJ Charbonneau, S
Citation: Hj. Chen et al., Enhanced group-V intermixing in InGaAs InP quantum wells studied by cross-sectional scanning tunneling microscopy, APPL PHYS L, 75(1), 1999, pp. 79-81
Risultati: 1-10 |