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Results: 1-25 | 26-35 |
Results: 26-35/35
Thick hydride vapour phase epitaxial GaN layers grown on sapphire with different buffers
Authors: Paskova, T Birch, J Tungasmita, S Beccard, R Heuken, M Svedberg, EB Runesson, P Goldys, EM Monemar, B
Citation: T. Paskova et al., Thick hydride vapour phase epitaxial GaN layers grown on sapphire with different buffers, PHYS ST S-A, 176(1), 1999, pp. 415-419
Hydride vapour-phase epitaxy growth and cathodoluminescence characterisation of thick GaN films
Authors: Paskova, T Goldys, EM Monemar, B
Citation: T. Paskova et al., Hydride vapour-phase epitaxy growth and cathodoluminescence characterisation of thick GaN films, J CRYST GR, 203(1-2), 1999, pp. 1-11
Contribution of free-electron recombination to the luminescence spectra ofthick GaN films grown by hydride vapor phase epitaxy
Authors: Arnaudov, B Paskova, T Goldys, EM Yakimova, R Evtimova, S Ivanov, IG Henry, A Monemar, B
Citation: B. Arnaudov et al., Contribution of free-electron recombination to the luminescence spectra ofthick GaN films grown by hydride vapor phase epitaxy, J APPL PHYS, 85(11), 1999, pp. 7888-7892
Intersubband optical absorption in strained double barrier quantum well infrared photodetectors
Authors: Shi, JJ Goldys, EM
Citation: Jj. Shi et Em. Goldys, Intersubband optical absorption in strained double barrier quantum well infrared photodetectors, IEEE DEVICE, 46(1), 1999, pp. 83-88
Extensional piezoelectric coefficients of gallium nitride and aluminum nitride
Authors: Guy, IL Muensit, S Goldys, EM
Citation: Il. Guy et al., Extensional piezoelectric coefficients of gallium nitride and aluminum nitride, APPL PHYS L, 75(26), 1999, pp. 4133-4135
Shear piezoelectric coefficients of gallium nitride and aluminum nitride
Authors: Muensit, S Goldys, EM Guy, IL
Citation: S. Muensit et al., Shear piezoelectric coefficients of gallium nitride and aluminum nitride, APPL PHYS L, 75(25), 1999, pp. 3965-3967
Electrostriction in gallium nitride
Authors: Guy, IL Muensit, S Goldys, EM
Citation: Il. Guy et al., Electrostriction in gallium nitride, APPL PHYS L, 75(23), 1999, pp. 3641-3643
Microstructural evolution of GaSb self-assembled islands grown by metalorganic chemical vapor deposition
Authors: Kinder, BM Goldys, EM
Citation: Bm. Kinder et Em. Goldys, Microstructural evolution of GaSb self-assembled islands grown by metalorganic chemical vapor deposition, APPL PHYS L, 73(9), 1998, pp. 1233-1235
Influence of the surface morphology on the yellow and "edge" emissions in wurtzite GaN
Authors: Godlewski, M Goldys, EM Phillips, MR Langer, R Barski, A
Citation: M. Godlewski et al., Influence of the surface morphology on the yellow and "edge" emissions in wurtzite GaN, APPL PHYS L, 73(25), 1998, pp. 3686-3688
Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence
Authors: Goldys, EM Paskova, T Ivanov, IG Arnaudov, B Monemar, B
Citation: Em. Goldys et al., Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence, APPL PHYS L, 73(24), 1998, pp. 3583-3585
Risultati: 1-25 | 26-35 |