Authors:
Golubev, VG
Kosobukin, VA
Kurdyukov, DA
Medvedev, AV
Pevtsov, AB
Citation: Vg. Golubev et al., Photonic crystals with tunable band gap based on filled and inverted opal-silicon composites, SEMICONDUCT, 35(6), 2001, pp. 680-683
Authors:
Golubev, VG
Dukin, AA
Medvedev, AV
Pevtsov, AB
Sel'kin, AV
Feoktistov, NA
Citation: Vg. Golubev et al., Fabry-Perot a-Si : H/a-SiOx : H microcavities with an erbium-doped a-Si : H active layer, SEMICONDUCT, 35(10), 2001, pp. 1213-1221
Authors:
Feoktistov, NA
Golubev, VG
Medvedev, AV
Pevtsov, AB
Citation: Na. Feoktistov et al., a-Si(Er): H films prepared by metalorganic assisted PECVD with strongly hydrogen-diluted silane, SEMIC SCI T, 16(1), 2001, pp. 54-57
Authors:
Bogomolov, VN
Feoktistov, NA
Golubev, VG
Hutchison, JL
Kurdyukov, DA
Pevtsov, AB
Schwarz, R
Sloan, J
Sorokin, LM
Citation: Vn. Bogomolov et al., Three-dimensional array of silicon nanoscale elements in artificial SiO2 opal host, J NON-CRYST, 266, 2000, pp. 1021-1024
Authors:
Diaz-Guerra, C
Piqueras, J
Golubev, VG
Kurdyukov, DA
Pevtsov, AB
Zamoryanskaya, MV
Citation: C. Diaz-guerra et al., Scanning tunneling spectroscopy study of silicon and platinum assemblies in an opal matrix, APPL PHYS L, 77(20), 2000, pp. 3194-3196
Authors:
Dukin, AA
Feoktistov, NA
Golubev, VG
Medvedev, AV
Pevtsov, AB
Sel'kin, AV
Citation: Aa. Dukin et al., Optical properties of a Fabry-Perot microcavity with Er-doped hydrogenatedamorphous silicon active layer, APPL PHYS L, 77(19), 2000, pp. 3009-3011
Authors:
Andreev, AA
Voronkov, VB
Golubev, VG
Medvedev, AV
Pevtsov, AB
Citation: Aa. Andreev et al., Influence of thermal annealing on the intensity of the 1.54-mu m photoluminescence band in erbium-doped amorphous hydrogenated silicon, SEMICONDUCT, 33(1), 1999, pp. 93-96
Authors:
Andreev, AA
Golubev, VG
Medvedev, AV
Pevtsov, AB
Feoktistov, NA
Masterov, VF
Aldabergenova, SB
Taylor, PC
Citation: Aa. Andreev et al., Observation of fine structure in the photoluminescence spectrum of an Er3+ion in an amorphous silicon matrix, JETP LETTER, 70(12), 1999, pp. 797-800
Citation: Ns. Averkiev et al., Shallow donor resonant state width narrowing near crossing with underlyingLandau subband bottom in GaAs, PHYS ST S-B, 210(2), 1998, pp. 885-889