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Results: 1-7 |
Results: 7
Physical origin of the excess thermal noise in short channel MOSFETs
Authors: Goo, JS Choi, CH Abramo, A Ahn, JG Yu, ZP Lee, TH Dutton, RW
Citation: Js. Goo et al., Physical origin of the excess thermal noise in short channel MOSFETs, IEEE ELEC D, 22(2), 2001, pp. 101-103
Xenobiotic response in humanized double transgenic mice expressing tetracycline-controlled transactivator and human CYP1B1
Authors: Hwang, DY Chae, KR Shin, DH Hwang, JH Lim, CH Kim, YJ Kim, BJ Goo, JS Shin, YY Jang, IS Cho, JS Kim, YK
Citation: Dy. Hwang et al., Xenobiotic response in humanized double transgenic mice expressing tetracycline-controlled transactivator and human CYP1B1, ARCH BIOCH, 395(1), 2001, pp. 32-40
Mammary gland tumor in transgenic mice expressing targeted beta-casein/HPV16E6 fusion gene
Authors: Hwang, DY Chae, KR Shin, DH Jang, IS Hwang, JH Kim, YJ Cho, JY Kim, BJ Goo, JS Lim, CJ Kim, CK Cho, YY Paik, SG Kim, YK Cho, JS
Citation: Dy. Hwang et al., Mammary gland tumor in transgenic mice expressing targeted beta-casein/HPV16E6 fusion gene, INT J ONCOL, 17(6), 2000, pp. 1093-1098
Shallow source/drain extension effects on external resistance in sub-0.1 mu m MOSFET's
Authors: Choi, CH Goo, JS Yu, ZP Dutton, RW
Citation: Ch. Choi et al., Shallow source/drain extension effects on external resistance in sub-0.1 mu m MOSFET's, IEEE DEVICE, 47(3), 2000, pp. 655-658
An accurate and efficient high frequency noise simulation technique for deep submicron MOSFETs
Authors: Goo, JS Choi, CH Danneville, F Morifuji, E Momose, HS Yu, ZP Iwai, H Lee, TH Dutton, RW
Citation: Js. Goo et al., An accurate and efficient high frequency noise simulation technique for deep submicron MOSFETs, IEEE DEVICE, 47(12), 2000, pp. 2410-2419
Capacitance reconstruction from measured C-V in high leakage, nitride/oxide MOS
Authors: Choi, CH Wu, Y Goo, JS Yu, ZP Dutton, RW
Citation: Ch. Choi et al., Capacitance reconstruction from measured C-V in high leakage, nitride/oxide MOS, IEEE DEVICE, 47(10), 2000, pp. 1843-1850
MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm)
Authors: Choi, CH Goo, JS Oh, TY Yu, ZP Dutton, RW Bayoumi, A Cao, M Vande Voorde, P Vook, D Diaz, CH
Citation: Ch. Choi et al., MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm), IEEE ELEC D, 20(6), 1999, pp. 292-294
Risultati: 1-7 |