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Mesastripe single-mode separately bounded lasers based on InGaAsP/InP heterostructures obtained by VPE of organometallic compounds
Authors: Golikova, EG Gorbylev, VA Il'in, YV Kureshov, VA Leshko, AY Lyutetskii, AV Pikhtin, NA Ryaboshtan, YA Simakov, VA Tarasov, IS Tret'yakova, EA Fetisova, NV
Citation: Eg. Golikova et al., Mesastripe single-mode separately bounded lasers based on InGaAsP/InP heterostructures obtained by VPE of organometallic compounds, TECH PHYS L, 26(4), 2000, pp. 295-297
Separately bounded InGaAsP high-power laser heterostructures obtained by VPE of organometallic compounds
Authors: Golikova, EG Gorbylev, VA Davidyuk, NY Kureshov, VA Leshko, AY Lyutetskii, AV Pikhtin, NA Ryaboshtan, YA Simakov, VA Tarasov, IS Fetisova, NV
Citation: Eg. Golikova et al., Separately bounded InGaAsP high-power laser heterostructures obtained by VPE of organometallic compounds, TECH PHYS L, 26(3), 2000, pp. 225-227
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