Authors:
Wickenden, AE
Koleske, DD
Henry, RL
Gorman, RJ
Twigg, ME
Fatemi, M
Freitas, JA
Moore, WJ
Citation: Ae. Wickenden et al., The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys, J ELEC MAT, 29(1), 2000, pp. 21-26
Citation: Ae. Wickenden et al., The impact of nitridation and nucleation layer process conditions on morphology and electron transport in GaN epitaxial films, J ELEC MAT, 28(3), 1999, pp. 301-307
Citation: Dd. Koleske et al., Enhanced GaN decomposition in H-2 near atmospheric pressures (vol 73, pg 2018, 1998), APPL PHYS L, 75(11), 1999, pp. 1646-1646
Authors:
Fatemi, M
Wickenden, AE
Koleske, DD
Twigg, ME
Freitas, JA
Henry, RL
Gorman, RJ
Citation: M. Fatemi et al., Enhancement of electrical and structural properties of GaN layers grown onvicinal-cut, a-plane sapphire substrates, APPL PHYS L, 73(5), 1999, pp. 608-610