Authors:
Galkin, NG
Goroshko, DL
Kosikov, SI
Ivanov, VA
Citation: Ng. Galkin et al., In situ hall measurements of Si(111)/Cr, Si(111)/Fe and Si(111)Mg disordered systems at submonolayer coverages, APPL SURF S, 175, 2001, pp. 223-229
Authors:
Galkin, NG
Goroshko, DL
Krivoshchapov, ST
Zakharova, ES
Citation: Ng. Galkin et al., Conductivity mechanisms in the ordered surface phases and two-dimensional monosilicides of Cr and Fe on Si(111), APPL SURF S, 175, 2001, pp. 230-236
Authors:
Galkin, NG
Goroshko, DL
Konchenko, AV
Ivanov, VA
Zakharova, ES
Krivoshchapov, ST
Citation: Ng. Galkin et al., In situ Hall measurements of Fe and Cr submonolayers on Si(111) of n- and p-type conductivity, SURF REV L, 7(3), 2000, pp. 257-265
Authors:
Galkin, NG
Konchenko, AV
Goroshko, DL
Maslov, AM
Vavanova, SV
Kosikov, SI
Citation: Ng. Galkin et al., Electronic structure, conductivity and carrier mobility in very thin epitaxial CrSi(111) layers with Si(111) root 3 X root 3/30 LEED pattern, APPL SURF S, 166(1-4), 2000, pp. 113-118
Authors:
Galkin, NG
Goroshko, DL
Konchenko, AV
Ivanov, VA
Gouralnik, AS
Citation: Ng. Galkin et al., In situ Hall measurements of macroscopic electrical properties of chromium-covered Si(111) surfaces, SURF REV L, 6(1), 1999, pp. 7-12
Authors:
Galkin, NG
Ivanov, VA
Konchenko, AV
Goroshko, DL
Citation: Ng. Galkin et al., An ultra-high-vacuum system for computer-integrated measurements of the Hall effect and conductivity of two-dimensional films, INSTR EXP R, 42(2), 1999, pp. 284-289