Authors: Chernyak, L Osinsky, A Fuflyigin, VN Graff, JW Schubert, EF

Citation: L. Chernyak et al., Minority electron transport anisotropy in p-type AlxGa1-xN/GaN superlattices, IEEE DEVICE, 48(3), 2001, pp. 433-437

Authors: Graff, JW Schubert, EF Osinsky, A

Citation: Jw. Graff et al., GaN/SiC p-n mesa junctions for HBTs fabricated using selective photoelectrochemical etching, ELECTR LETT, 37(4), 2001, pp. 249-250

Authors: Waldron, EL Graff, JW Schubert, EF

Citation: El. Waldron et al., Improved mobilities and resistivities in modulation-doped p-type AlGaN/GaNsuperlattices, APPL PHYS L, 79(17), 2001, pp. 2737-2739

Authors: Graff, JW Schubert, EF

Citation: Jw. Graff et Ef. Schubert, Flat free-standing silicon diaphragms using silicon-on-insulator wafers, SENS ACTU-A, 84(3), 2000, pp. 276-279

Authors: Li, YL Schubert, EF Graff, JW Osinsky, A Schaff, WF

Citation: Yl. Li et al., Low-resistance ohmic contacts to p-type GaN, APPL PHYS L, 76(19), 2000, pp. 2728-2730