Authors: Pons, M Anikin, M Chourou, K Dedulle, JM Madar, R Blanquet, E Pisch, A Bernard, C Grosse, P Faure, C Basset, G Grange, Y

Citation: M. Pons et al., State of the art in the modelling of SiC sublimation growth, MAT SCI E B, 61-2, 1999, pp. 18-28

Authors: Grosse, P Basset, G Calvat, C Couchaud, M Faure, C Ferrand, B Grange, Y Anikin, M Bluet, JM Chourou, K Madar, R

Citation: P. Grosse et al., Influence of reactor cleanness and process conditions on the growth by PVTand the purity of 4H and 6H SiC crystals, MAT SCI E B, 61-2, 1999, pp. 58-62

Authors: Anikin, M Chourou, K Pons, M Bluet, JM Madar, R Grosse, P Faure, C Basset, G Grange, Y

Citation: M. Anikin et al., Influence of growth conditions on the defect formation in SiC ingots, MAT SCI E B, 61-2, 1999, pp. 73-76

Authors: Chourou, K Anikin, M Bluet, JM Dedulle, JM Madar, R Pons, M Blanquet, E Bernard, C Grosse, P Faure, C Basset, G Grange, Y

Citation: K. Chourou et al., Modelling of SiC sublimation growth process: analyses of macrodefects formation, MAT SCI E B, 61-2, 1999, pp. 82-85