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Results: 1-9 |
Results: 9
Carrier lifetime investigation in 4H-SiC grown by CVD and sublimation epitaxy
Authors: Grivickas, P Galeckas, A Linnros, J Syvajarvi, M Yakimova, R Grivickas, V Tellefsen, JA
Citation: P. Grivickas et al., Carrier lifetime investigation in 4H-SiC grown by CVD and sublimation epitaxy, MAT SC S PR, 4(1-3), 2001, pp. 191-194
Carrier diffusion characterization in epitaxial 4H-SiC
Authors: Grivickas, P Linnros, J Grivickas, V
Citation: P. Grivickas et al., Carrier diffusion characterization in epitaxial 4H-SiC, J MATER RES, 16(2), 2001, pp. 524-528
Optical characterization of excess carrier lifetime and surface recombination in 4H/6H-SiC
Authors: Galeckas, A Linnros, J Frischholz, M Grivickas, V
Citation: A. Galeckas et al., Optical characterization of excess carrier lifetime and surface recombination in 4H/6H-SiC, APPL PHYS L, 79(3), 2001, pp. 365-367
Properties of CdS nanocrystallites embedded in to thin ZrO2 waveguides
Authors: Mikulskas, I Bernstein, E Plenet, JC Bovier, C Tomasiunas, R Grivickas, V Vaitkus, JV Mugnier, J Dumas, J
Citation: I. Mikulskas et al., Properties of CdS nanocrystallites embedded in to thin ZrO2 waveguides, MAT SCI E B, 69, 2000, pp. 418-423
Spatially and time-resolved infrared absorption for optical and electricalcharacterization of indirect band gap semiconductors
Authors: Grivickas, V Galeckas, A Bikbajevas, V Linnros, J Tellefsen, JA
Citation: V. Grivickas et al., Spatially and time-resolved infrared absorption for optical and electricalcharacterization of indirect band gap semiconductors, THIN SOL FI, 364(1-2), 2000, pp. 181-185
Band edge absorption, carrier recombination and transport measurements in 4H-SiC epilayers
Authors: Grivickas, V Linnros, J Grivickas, P Galeckas, A
Citation: V. Grivickas et al., Band edge absorption, carrier recombination and transport measurements in 4H-SiC epilayers, MAT SCI E B, 61-2, 1999, pp. 197-201
Investigation of surface recombination and carrier lifetime in 4H/6H-SiC
Authors: Galeckas, A Linnros, J Frischholz, M Rottner, K Nordell, N Karlsson, S Grivickas, V
Citation: A. Galeckas et al., Investigation of surface recombination and carrier lifetime in 4H/6H-SiC, MAT SCI E B, 61-2, 1999, pp. 239-243
Injection-level dependent surface recombination velocities at the Si-SiO2 interface
Authors: Bikbajevas, V Grivickas, V Linnros, J Tellefsen, JA
Citation: V. Bikbajevas et al., Injection-level dependent surface recombination velocities at the Si-SiO2 interface, PHYS SCR, T79, 1999, pp. 322-326
Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in SiO2
Authors: Linnros, J Lalic, N Galeckas, A Grivickas, V
Citation: J. Linnros et al., Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in SiO2, J APPL PHYS, 86(11), 1999, pp. 6128-6134
Risultati: 1-9 |